1,328 research outputs found

    SWEET11 and 15 as key players in seed filling in rice

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    Thickness dependent magnetotransport in ultra-thin manganite films

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    To understand the near-interface magnetism in manganites, uniform, ultra-thin films of La_{0.67}Sr_{0.33}MnO_3 were grown epitaxially on single crystal (001) LaAlO_3 and (110) NdGaO_3 substrates. The temperature and magnetic field dependent film resistance is used to probe the film's structural and magnetic properties. A surface and/or interface related dead-layer is inferred from the thickness dependent resistance and magnetoresistance. The total thickness of the dead layer is estimated to be 30A˚\sim 30 \AA for films on NdGaO_3 and 50A˚\sim 50 \AA for films on LaAlO_3.Comment: 11 pages, 4 figure

    Quantum Hall Ferromagnetism in a Two-Dimensional Electron System

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    Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction ν=1/3\nu = 1/3) and spin-unpolarized (ν=2/5\nu = 2/5) states is accompanied by a complicated series of hysteresis loops reminiscent of a classical ferromagnet. In correlation with the hysteresis, magnetoresistance can either grow or decay logarithmically in time with remarkable persistence and does not saturate. In contrast to the established models of relaxation, the relaxation rate exhibits an anomalous divergence as temperature is reduced. These results indicate the presence of novel two-dimensional ferromagnetism with a complicated magnetic domain dynamic.Comment: 15 pages, 5 figure

    Evolution of transport properties of BaFe2-xRuxAs2 in a wide range of isovalent Ru substitution

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    The effects of isovalent Ru substitution at the Fe sites of BaFe2-xRuxAs2 are investigated by measuring resistivity and Hall coefficient on high-quality single crystals in a wide range of doping (0 < x < 1.4). Ru substitution weakens the antiferromagnetic (AFM) order, inducing superconductivity for relatively high doping level of 0.4 < x < 0.9. Near the AFM phase boundary, the transport properties show non-Fermi-liquid-like behaviors with a linear-temperature dependence of resistivity and a strong temperature dependence of Hall coefficient with a sign change. Upon higher doping, however, both of them recover conventional Fermi-liquid behaviors. Strong doping dependence of Hall coefficient together with a small magnetoresistance suggest that the anomalous transport properties can be explained in terms of anisotropic charge carrier scattering due to interband AFM fluctuations rather than a conventional multi-band scenario.Comment: 7 pages, 6 figures, submitted to Phys. Rev.

    Localization of Two-dimensional Electron Gas in LaAlO3/SrTiO3 Heterostructures

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    We report strong localization of 2D electron gas in LaAlO3 / SrTiO3 epitaxial thin-film heterostructures grown on (LaAlO3)0.3-(Sr2AlTaO3)0.7 substrates by using pulsed laser deposition with in-situ reflection high-energy electron diffraction. Using longitudinal and transverse magnetotransport measurements, we have determined that disorder at the interface influences the conduction behavior, and that increasing the carrier concentration by growing at lower oxygen partial pressure changes the conduction from strongly localized at low carrier concentration to metallic at higher carrier concentration, with indications of weak localization. We interpret this behavior in terms of a changing occupation of Ti 3d bands near the interface, each with a different spatial extent and susceptibility to localization by disorder, and differences in carrier confinement due to misfit strain and point defects.Comment: 12 pages, 4 figure

    Electrical switching of magnetic polarity in a multiferroic BiFeO3 device at room temperature

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    We have directly imaged reversible electrical switching of the cycloidal rotation direction (magnetic polarity) in a (111)-BiFeO3 epitaxial-film device at room temperature by non-resonant x-ray magnetic scattering. Consistent with previous reports, fully relaxed (111)-BiFeO3 epitaxial films consisting of a single ferroelectric domain were found to comprise a sub-micron-scale mosaic of magneto-elastic domains, all sharing a common direction of the magnetic polarity, which was found to switch reversibly upon reversal of the ferroelectric polarization without any measurable change of the magneto-elastic domain population. A real-space polarimetry map of our device clearly distinguished between regions of the sample electrically addressed into the two magnetic states with a resolution of a few tens of micron. Contrary to the general belief that the magneto-electric coupling in BiFeO3 is weak, we find that electrical switching has a dramatic effect on the magnetic structure, with the magnetic moments rotating on average by 90 degrees at every cycle.Comment: 6 pages, 5 figures; corrected figure

    Coexistence of superconductivity and ferromagnetism in two dimensions

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    Ferromagnetism is usually considered to be incompatible with conventional superconductivity, as it destroys the singlet correlations responsible for the pairing interaction. Superconductivity and ferromagnetism are known to coexist in only a few bulk rare-earth materials. Here we report evidence for their coexistence in a two-dimensional system: the interface between two bulk insulators, LaAlO3_3 (LAO) and SrTiO3_3 (STO), a system that has been studied intensively recently. Magnetoresistance, Hall and electric-field dependence measurements suggest that there are two distinct bands of charge carriers that contribute to the interface conductivity. The sensitivity of properties of the interface to an electric field make this a fascinating system for the study of the interplay between superconductivity and magnetism.Comment: 4 pages, 4 figure

    In-situ Magnesium Diboride Superconducting Thin Films grown by Pulsed Laser Deposition

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    Superconducting thin films of MgB2 were deposited by Pulsed Laser Deposition on magnesium oxide and sapphire substrates. Samples grown at 450C in an argon buffer pressure of about 10-2 mbar by using a magnesium enriched target resulted to be superconducting with a transition temperature of about 25 K. Film deposited from a MgB2 sintered pellet target in ultra high vacuum conditions showed poor metallic or weak semiconducting behavior and they became superconducting only after an ex-situ annealing in Mg vapor atmosphere. Up to now, no difference in the superconducting properties of the films obtained by these two procedures has been evidenced.Comment: 10 pages, 4 figure
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