1 research outputs found
Low-Temperature Ohmic Contact to Monolayer MoS<sub>2</sub> by van der Waals Bonded Co/<i>h</i>‑BN Electrodes
Monolayer MoS<sub>2</sub>, among many other transition metal dichalcogenides, holds great
promise for future applications in nanoelectronics and optoelectronics
due to its ultrathin nature, flexibility, sizable band gap, and unique
spin-valley coupled physics. However, careful study of these properties
at low temperature has been hindered by an inability to achieve low-temperature
Ohmic contacts to monolayer MoS<sub>2</sub>, particularly at low carrier
densities. In this work, we report a new contact scheme that utilizes
cobalt (Co) with a monolayer of hexagonal boron nitride (h-BN) that
has the following two functions: modifies the work function of Co
and acts as a tunneling barrier. We measure a flat-band Schottky barrier
of 16 meV, which makes thin tunnel barriers upon doping the channels,
and thus achieve low-T contact resistance of 3 kΩ.μm at
a carrier density of 5.3 × 10<sup>12</sup>/cm<sup>2</sup>. This
further allows us to observe Shubnikov–de Haas oscillations
in monolayer MoS<sub>2</sub> at much lower carrier densities compared
to previous work