1 research outputs found
InAs/GaAs Sharply Defined Axial Heterostructures in Self-Assisted Nanowires
We
present the fabrication of axial InAs/GaAs nanowire heterostructures
on silicon with atomically sharp interfaces by molecular beam epitaxy.
Our method exploits the crystallization at low temperature, by As
supply, of In droplets deposited on the top of GaAs NWs grown by the
self-assisted (self-catalyzed) mode. Extensive characterization based
on transmission electron microscopy sets an upper limit for the InAs/GaAs
interface thickness within few bilayers (≤1.5 nm). A detailed
study of elastic/plastic strain relaxation at the interface is also
presented, highlighting the role of nanowire lateral free surfaces