Indentation in single-crystal 6H silicon carbide: Experimental investigations and finite element analysis

Silicon carbide (SiC) is a promising material ideally suited for small-scaled devices deployed in harsh environments. SiC is brittle in bulk form, however, at small component length-scales plasticity is observed. A good understanding of deformation behaviour is, therefore, crucial for reliable small-scale component design and fabrication. Here, experimental and numerical analysis of the deformation behaviour of single-crystal 6H-SiC in nanoindentation is presented. Nanoindentation studies are carried out in two orientations of the single-crystal using a Berkovich indenter. Next, a crystal-plasticity theory was implemented in finiteelement (FE) modelling framework to predict the deformation of the hexagonal single-crystal. The validity of the present FE modelling methodology was corroborated through comparison between FE simulations and experimental data in terms of indent profile and loaddisplacement curves. Our results showed that classical crystal plasticity theory can be reliably applied in predicting plastic deformation of ceramic at small scales

Design of SiC-Doped Piezoresistive Pressure Sensor for High-Temperature Applications

Within these studies the piezoresistive effect was analyzed for 6H-SiC and 4H-SiC material doped with various elements: N, B, and Sc. Bulk SiC crystals with a specific concentration of dopants were fabricated by the Physical Vapor Transport (PVT) technique. For such materials, the structures and properties were analyzed using X-ray diffraction, SEM, and Hall measurements. The samples in the form of a beam were also prepared and strained (bent) to measure the resistance change (Gauge Factor). Based on the results obtained for bulk materials, piezoresistive thin films on 6H-SiC and 4H-SiC substrate were fabricated by Chemical Vapor Deposition (CVD). Such materials were shaped by Focus Ion Beam (FIB) into pressure sensors with a specific geometry. The characteristics of the sensors made from different materials under a range of pressures and temperatures were obtained and are presented herewith

Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method

score: 0collation: 29-3

Characterization of Vanadium Doped 4H- and 6H-SiC Grown by PVT Method Using the Open Seed Backside

score: 13collation: 21-2