Point defect distribution in high-mobility conductive SrTiO3 crystals

We have carried out positron annihilation spectroscopy to characterize the spatial distribution and the nature of vacancy defects in insulating as-received as well as in reduced SrTiO3 substrates exhibiting high-mobility conduction. The substrates were reduced either by ion etching the substrate surfaces or by doping with vacancies during thin film deposition at low pressure and high temperature. We show that Ti-vacancies are native defects homogeneously distributed in as-received substrates. In contrast, the dominant vacancy defects are the same both in ion-etched and substrates reduced during the film growth, and they consist of non-homogeneous distributions of cation-oxygen vacancy complexes. Their spatial extension is tuned from a few microns in ion-etched samples to the whole substrate in specimens reduced during film deposition. Our results shed light on the transport mechanisms of conductive SrTiO3 crystals and on strategies for defect-engineered oxide quantum wells, wires and dots

Enhanced superconductivity in Hf-base metallic glasses

Systematic study of electrical resistivity of Hf_{100-x}Fe_x (x=20,25), Hf_{100-x}Cu_x (x=30,40,50), and Ti_{65}Cu_{35} metallic glasses has been done in the temperature range 0.3 K - 290 K, and in magnetic fields B <= 5 T. All Hf-base alloys are superconducting with T_c >= 0.44 K, which is well above T_c of pure crystalline Hf (0.13 K). From the initial slopes of the upper critical fields, (dH_{c2}/dT)_{T_c}, and resistivities we determined the dressed electronic densities of states, N_{\gamma}(E_F), for all alloys. Both T_c and N_{\gamma}(E_F) decrease with increasing x (Fe and Cu content). The results are compared with those for corresponding Zr-base metallic glasses and ion-implanted Hf films.Comment: 9 pages, 4 figures, 1 tabl

Grain-Size-Induced Collapse of Variable Range Hopping and Promotion of Ferromagnetism in Manganite La0.5Ca0.5MnO3

mong transition metal oxides, manganites have attracted significant attention because of colossal magnetoresistance (CMR)- a magnetic field-induced metal–insulator transition close to the Curie temperature. CMR is closely related to the ferromagnetic (FM) metallic phase which strongly competes with the antiferromagnetic (AFM) charge ordered (CO) phase, where conducting electrons localize and create a long range order giving rise to insulator-like behavior. One of the major open questions in manganites is the exact origin of this insulating behavior. Here we report a dc resistivity and magnetization study on manganite La1−xCaxMnO3 ceramic samples with different grain size, at the very boundary between CO/AFM insulating and FM metallic phases x = 0.5. Clear signatures of variable range hopping (VRH) are discerned in resistivity, implying the disorder-induced (Anderson) localization of conducting electrons. A significant increase of disorder associated with the reduction in grain size, however, pushes the system in the opposite direction from the Anderson localization scenario, resulting in a drastic decrease of resistivity, collapse of the VRH, suppression of the CO/AFM phase and growth of an FM contribution. These contradictory results are interpreted within the standard core-shell model and recent theories of Anderson localization of interacting particles

(Magneto)Transport Properties of (TiZrNbNi)_1−<i>x</i>Cu_<i>x</i> and (TiZrNbCu)_1−<i>x</i>Co_<i>x</i> Complex Amorphous Alloys

We present a systematic study of electrical resistivity, superconductive transitions and the Hall effect for three systems of compositionally complex amorphous alloys of early (TE) and late (TL) transition metals: (TiZrNbNi)1−xCux and (TiZrNbCu)1−xCox in a broad composition range of 0x0.5 as well as Ti0.30Zr0.15Nb0.15Cu0.2Ni0.2, Ti0.15Zr0.30Nb0.15Cu0.2Ni0.2 and Ti0.15Zr0.15Nb0.30Cu0.2Ni0.2. All samples showed high resistivity at room temperature, 140–240 μΩ cm, and the superconducting transition temperatures decreased with increasing late transition metal content, similar to binary amorphous and crystalline high-entropy TE-TL alloys. The Hall coefficient RH was temperature-independent and positive for all samples (except for (TiZrNbCu)0.57Co0.43), in good agreement with binary TE-TL alloys. Finally, for the temperature dependence of resistivity, as far as the authors are aware, we present a new model with two conduction channels, one of them being variable range hopping, such as the parallel conduction mode in the temperature range 20–200 K, with the exponent p=1/2. We examine this in the context of variable range hopping in granular metals

Semimetallic and charge-ordered α-(BEDT-TTF)2I3: On the role of disorder in dc transport and dielectric properties

α-(BEDT-TTF)2I3 is a prominent example of charge ordering among organic conductors. In this work, we explore the details of transport within the charge-ordered as well as semimetallic phase at ambient pressure. In the high-temperature semimetallic phase, the mobilities and concentrations of both electrons and holes conspire in such a way to create an almost temperature-independent conductivity as well as a low Hall effect. We explain these phenomena as a consequence of a predominantly interpocket scattering which equalizes mobilities of the two types of charge carriers. At low temperatures, within the insulating charge-ordered phase two channels of conduction can be discerned: a temperature-dependent activation, which follows the mean-field behavior, and a nearest-neighbor-hopping contribution. Together with negative magnetoresistance, the latter relies on the presence of disorder. The charge-ordered phase also features a prominent dielectric peak which bears a similarity to relaxor ferroelectrics. Its dispersion is determined by free-electron screening and pushed by disorder well below the transition temperature. The source of this disorder can be found in the anion layers which randomly perturb BEDT-TTF molecules through hydrogen bonds

Hall effect study of the κ -(ET) 2X family : Evidence for Mott-Anderson localization

We investigate the dc resistivity and Hall effect of the quasi-two-dimensional organic materials κ–(ET)2X, where X=Ag2(CN)3 and B(CN)4 and compare them with the results for X=Cu2(CN)3. All three compounds are considered to be quantum-spin-disordered Mott insulators. Despite high similarities in chemical composition and crystal structure, large differences in the dc resistivity and Hall coefficient are found. While around room temperature the dc transport properties are dominantly determined by the strength of the electron correlations, upon reducing the temperature, dc transport happens by hopping due to inherent disorder. The most disordered compound with X=Cu2(CN)3 turns out to have the lowest dc resistivity and the highest charge carrier density, i.e., in the phase diagram it is located closest to the metal-insulator transition. The least disordered compound with X=B(CN)4 shows the highest resistivity and the lowest carrier density, i.e., lies farthest from the metal-insulator transition. We explain such counterintuitive behavior within the theory of Mott-Anderson localization as a consequence of disorder-induced localized states within the correlation gap