Electronic mechanism for resistance drift in phase-change memory materials: Link to persistent photoconductivity

‘Phase-change’ memory materials, such as the canonical composition Ge2Sb2Te5, are being actively researched for non-volatile resistive random-access memory applications. In these devices, ultra-rapid reversible transformations between metastable highly electrically conducting (degenerate-semiconducting) crystalline and more electrically resistive (semiconducting) glassy phases are produced by the application of appropriate voltage pulses. Multilevel programming, wherein more than two metastable resistance states can be stored in the memory material as different proportions of partially glassy/crystalline regions, allows more than one bit to be stored per memory cell. However, this route to increasing data density, without recourse to device-size down-scaling, is threatened by the phenomenon of ‘resistance drift’, wherein the electrical resistance of the glassy phase slowly increases with time, following a weak power-law dependence, after being written with a voltage pulse. In this paper, we propose an intrinsic electronic mechanism for the resistance drift by identifying it with the phenomenon of persistent photoconductivity that is commonly observed in a wide range of disordered semiconductors. We develop a model for it in terms of the long-time, deep-trap release and subsequent recombination of charge carriers, akin to that which is believed to be responsible for the long-time photocurrent decay in amorphous semiconductors, such as hydrogenated amorphous silicon. In this case, the parameters controlling the resistance drift are the widths of the (localized) valence- and conduction-band tails in the vicinity of the bandgap. Hence, there is the potential for mitigating resistance drift in the amorphous state of phase-change memory materials by suitable material engineering (e.g. via compositional or fabricational control) to control the extent of band-tailing, thereby facilitating the future introduction of multistate memory

Understanding the thermal properties of amorphous solids using machine-learning-based interatomic potentials

© 2018 Informa UK Limited, trading as Taylor & Francis Group. Understanding the thermal properties of disordered systems is of fundamental importance for condensed matter physics - and for practical applications as well. While quantities such as the thermal conductivity are usually well characterised experimentally, their microscopic origin is often largely unknown - hence the pressing need for molecular simulations. However, the time and length scales involved with thermal transport phenomena are typically well beyond the reach of ab initio calculations. On the other hand, many amorphous materials are characterised by a complex structure, which prevents the construction of classical interatomic potentials. One way to get past this deadlock is to harness machine-learning (ML) algorithms to build interatomic potentials: these can be nearly as computationally efficient as classical force fields while retaining much of the accuracy of first-principles calculations. Here, we discuss neural network potentials (NNPs) and Gaussian approximation potentials (GAPs), two popular ML frameworks. We review the work that has been devoted to investigate, via NNPs, the thermal properties of phase-change materials, systems widely used in non-volatile memories. In addition, we present recent results on the vibrational properties of amorphous carbon, studied via GAPs. In light of these results, we argue that ML-based potentials are among the best options available to further our understanding of the vibrational and thermal properties of complex amorphous solids

Upgrades to Common Data Acquisition System Software Development for NASA's Rocket Propulsion Test Facilities and Software Reuse

Approximately five years ago, the National Aeronautics and Space Administration (NASA) Stennis Space Center (SSC) resumed operation of its large rocket engine test facilities after thirty years of contractor control. During this period, contactors used their own proprietary Data Acquisition System (DAS) to record and process rocket propulsion test data. The transition from a contractor managed facility to a NASA managed facility posed a difficult challenge. In order to support the commercial space launch initiative, SSC needed to develop a software replacement for the contractor proprietary DAS. This replacement software would enable SSC to operate propulsion test facilities more cost effectively and to be more readily able to adapt software for reuse, while at the same time provide internal and external customers with reliable population test data. Therefore, SSC developed in-house, a non-proprietary software suite of applications to replace the previously used proprietary DAS. The requirements for the DAS suite included recording and processing propulsion test data. This capability eliminates the necessity for customers to provide a DAS or rely on a competitor's DAS. An additional benefit of owning the software suite included enabling the ability to add additional features and functionality at a lower cost. The Rocket Propulsion Test (RPT) Program Office reviewed consideration for funding this project with the caveat that development of the software included availability for use with minimal modifications to all SSC test facilities and RPT centers: Marshall Space Flight Center (MSFC), White Sands Test Facility (WSTF), and Glenn Research Center (GRC) Plum Brook Station. Based upon this guideline, SSC created the NASA Data Acquisition System (NDAS) software suite. The ability to use the software at multiple centers, even though each field center uses differing DAS hardware with different capabilities, drove a requirement that the software design be portable with minimal modifications to the software. Then, with software release requirements, evaluations, and approvals completed, the NDAS software suite could also become available to other government agencies, corporations, universities, and the general United States public

Analytical capability of defocused μ-SORS in the chemical interrogation of thin turbid painted layers

© The Author(s) 2015. A recently developed micrometer-scale spatially offset Raman spectroscopy (m-SORS) method provides a new analytical capability for investigating non-destructively the chemical composition of sub-surface, micrometer-scale thickness, diffusely scattering layers at depths beyond the reach of conventional confocal Raman microscopy. Here, we demonstrate experimentally, for the first time, the capability of μ-SORS to determine whether two detected chemical components originate from two separate layers or whether the two components are mixed together in a single layer. Such information is important in a number of areas, including conservation of cultural heritage objects, and is not available, for highly turbid media, from conventional Raman microscopy, where axial (confocal) scanning is not possible due to an inability to facilitate direct imaging within the highly scattering sample. This application constitutes an additional capability for μ-SORS in addition to its basic capacity to determine the overall chemical make-up of layers in a turbid system

Ultrafast phase-change logic device driven by melting processes.

The ultrahigh demand for faster computers is currently tackled by traditional methods such as size scaling (for increasing the number of devices), but this is rapidly becoming almost impossible, due to physical and lithographic limitations. To boost the speed of computers without increasing the number of logic devices, one of the most feasible solutions is to increase the number of operations performed by a device, which is largely impossible to achieve using current silicon-based logic devices. Multiple operations in phase-change-based logic devices have been achieved using crystallization; however, they can achieve mostly speeds of several hundreds of nanoseconds. A difficulty also arises from the trade-off between the speed of crystallization and long-term stability of the amorphous phase. We here instead control the process of melting through premelting disordering effects, while maintaining the superior advantage of phase-change-based logic devices over silicon-based logic devices. A melting speed of just 900 ps was achieved to perform multiple Boolean algebraic operations (e.g., NOR and NOT). Ab initio molecular-dynamics simulations and in situ electrical characterization revealed the origin (i.e., bond buckling of atoms) and kinetics (e.g., discontinuouslike behavior) of melting through premelting disordering, which were key to increasing the melting speeds. By a subtle investigation of the well-characterized phase-transition behavior, this simple method provides an elegant solution to boost significantly the speed of phase-change-based in-memory logic devices, thus paving the way for achieving computers that can perform computations approaching terahertz processing rates.This is the author's accepted manuscript. The final version is published by PNAS here: http://www.pnas.org/content/early/2014/08/27/1407633111.full.pdf+html?with-ds=yes

Impedance-based sensor for potassium ions.

A conductometric sensor for potassium ions in solution is presented. Interdigitated, planar gold electrodes were coated with a potassium-selective polymer membrane composed of a poly(vinyl chloride) matrix with about 65 wt% of plasticiser and 2-5 wt% of a potassium-selective ionophore. The impedance of the membrane was measured, using the electrodes as a transducer, and related to the concentration of potassium in a sample solution in contact with the membrane. Sensitivity was optimised by varying the sensor components, and selectivity for potassium over sodium was also shown. The resulting devices are compact, miniature, robust sensors which, by means of impedance measurements, eliminate the need for a reference electrode. The sensor was tested for potassium concentration changes of 2 mM across the clinically relevant range of 2.7-18.7 mM.Henslow Fellowship, Darwin College, Cambridge L'Oreal -UNESCO UK & Ireland Fellowship For Women In Scienc

Atomistic origin of the enhanced crystallization speed and n-type conductivity in Bi-doped Ge-Sb-Te phase-change materials

Phase-change alloys are the functional materials at the heart of an emerging digital-storage technology. The GeTe-Sb2Te3 pseudo-binary systems, in particular the composition Ge2Sb2Te5 (GST), are one of a handful of materials which meet the unique requirements of a stable amorphous phase, rapid amorphous-to-crystalline phase transition, and significant contrasts in optical and electrical properties between material states. The properties of GST can be optimized by doping with p-block elements, of which Bi has interesting effects on the crystallisation kinetics and electrical properties. We have carried out a comprehensive simulational study of Bi-doped GST, looking at trends in behavior and properties as a function of dopant concentration. Our results reveal how Bi integrates into the host matrix, and provide insight into its enhancement of the crystallisation speed. We propose a straightforward explanation for the reversal of the charge-carrier sign beyond a critical doping threshold. We also investigate how Bi affects the optical properties of GST. The microscopic insight from this study may assist in the future selection of dopants to optimize the phase-change properties of GST, and also of other PCMs, and the general methods employed in this work should be applicable to the study of related materials, e.g. doped chalcogenide glasses.This is the final published version. It's also available from Wiley at http://onlinelibrary.wiley.com/doi/10.1002/adfm.201401202/pdf

First-principles simulations of vibrational decay and lifetimes in a -Si:H and a-Si:D

Phonon lifetime in materials is an important observable that conveys basic information about structure, dynamics, and anharmonicity. Recent vibrational transient-grating measurements, using picosecond infrared pulses from free-electron lasers, have demonstrated that the vibrational-population decay rates of localized high-frequency stretching modes (HSMs) in hydrogenated and deuterated amorphous silicon (a-Si:H/D) increase with temperature and the vibrational energy redistributes among the bending modes of Si in a-Si:H/D. Motivated by this observation, we address the problem from first-principles density-functional calculations and study the time evolution of the vibrational-population decay in a-Si:H/D, the average decay times, and the possible decay channels for the redistribution of vibrational energy. The average lifetimes of the localized HSMs in a-Si:H and a-Si:D are found to be approximately 51-92 ps and 50-78 ps, respectively, in the temperature range of 25-200 K, which are consistent with experimental data. A weak temperature dependence of the vibrational-population decay rates has been observed via a slight increase of the decay rates with temperature, which can be attributed to stimulated emission and increased anharmonic coupling between the normal modes at high temperature.The work is partially supported by the U.S. National Science Foundation under Grants No. DMR 1570166, No. DMR 1570118, and No. DMR 1506836. We acknowledge the use of computing resources at the Texas Advanced Computing Center and Ohio Supercomputer Center

n-type chalcogenides by ion implantation.

Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb 'doping' concentrations (~5-11 at.%), incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses.This work was supported by the UK EPSRC grants EP/I018417/1, EP/I019065/1 and EP/I018050/1.This is the author accepted manuscript. The final version is available from NPG via http://dx.doi.org/10.1038/ncomms634