Studies on micro-structural and electrical properties of spray-deposited fluorine-doped tin oxide thin films from low-cost precursor

Thin films of fluorine-doped tin oxide $(SnO_2:F)$ on glass were prepared by spray pyrolysis technique using stannous chloride $(SnCl_2)$ and ammonium fluoride $(NH_4F)$ as precursors. The as-prepared films were characterized for their structural and electrical properties and are discussed in detail in this article. The surface morphology studies revealed that the films are grainy and the roughness of undoped films has been reduced on fluorine doping. X-ray diffraction (XRD) studies revealed that the films are polycrystalline. It further revealed that the undoped films grow along the preferred orientation of (211), whereas all the doped films grow along (200). The minimum sheet resistance $1.75 \Omega/sq$ achieved in the present study for the films doped with 15 wt.% F is the lowest among the reported values for these materials prepared using $SnCl_2$ precursor. The electrical transport phenomenon has been analyzed in order to find out the possible scattering mechanism that limiting the mobility of charge carriers

Studies on structural and electrical properties of spray deposited SnO2:FSnO_2:F thin films as a function of film thickness

Thin films of fluorine-doped tin oxide $(SnO_2:F)$ on glass were prepared by spray pyrolysis technique from an economic stannous chloride $(SnCl_2)$ precursor. In order to find out the effect of solution concentration on growth of the films, these films were prepared using different precursor concentrations. In the present paper we report the thickness dependent properties of $SnO_2:F$ films. X-ray diffraction(XRD) studies revealed that the preferred orientation of the films varies with the film thickness and are reflected in scanning electron microscope (SEM)studies as they showed different grain shapes. The minimum sheet resistance $(3.2\Omega\sqcup)$ achieved in the present study was found to be the lowest among the earlier reported values for these films prepared from $SnCl_2$ precursor. The possibility of various scattering mechanisms as to be a dominant factor in limiting the mobility of charge carriers has been analyse

High-mobility molybdenum doped indium oxide thin films prepared by spray pyrolysis technique

Molybdenum doped indium oxide (IMO) thin films were deposited on the glass substrates preheated to 450°C by spray pyrolysis technique.The Mo doping was varied between 0 and 2.0 at.%. The films were characterized by their structural, electrical and optical properties. The films are confirmed to be cubic bixbyite $In_2o_3$ with a strongest orientation along (222) plane, which is shifted to (400) plane for the increase in Mo doping to 1.25 and 2 at.%. The film deposited with 0.5 at.% Mo doping shows high mobility of 76.9 $cm^2V^{-1}s^{-1}$, resistivity of $1.8\times10^{-3}\Omega-cm$ and high carrier concentration of $4.6\times10^{19}$ $cm^{-3}$ with 81.3% transmittance in the visible range between 500 and 800 nm. Further, the transparency extents well into the near-IR range

High near-infrared transparent molybdenum-doped indium oxide thin films for nanocrystalline silicon solar cell applications

Molybdenum-doped indium oxide (IMO) thin films were deposited at 450 °C for varying molybdenum concentrations in the range of 0.5–2 at% by the spray pyrolysis technique. These films confirmed the cubic bixbyite structure of polycrystalline In2O3. The preferred growth orientation along the (2 2 2) plane shifts to (4 0 0) on higher Mo doping levels. The films doped with 0.5 at% Mo showed high mobility of 76.9 cm2/(V s). The high visible transmittance extends well into the near-infrared region. A possibility of using the produced IMO films in nanocrystalline (nc) silicon solar cell applications is discussed in this article. The morphological studies showed a change in the microstructure, which is consistent with the change in crystallographic orientation