Nanopillar Arrays on Semiconductor Membranes as Electron Emission Amplifiers

A new transmission-type electron multiplier was fabricated from silicon-on-insulator (SOI) material by integrating an array of one dimensional (1D) silicon nanopillars onto a two dimensional (2D) silicon membrane. Primary electrons are injected into the nanopillar-membrane system from the flat surface of the membrane, while electron emission from the other side is probed by an anode. The secondary electron yield (SEY) from nanopillars is found to be about 1.8 times that of plane silicon membrane. This gain in electron number is slightly enhanced by the electric field applied from the anode. Further optimization of the dimensions of nanopillars and membrane and application of field emission promise an even higher gain for detector applications and allow for probing of electronic/mechanical excitations in nanopillar-membrane system excited by incident particles or radiation.Comment: 4 figure

Attosecond tracking of light absorption and refraction in fullerenes

The collective response of matter is ubiquitous and widely exploited, e.g. in plasmonic, optical and electronic devices. Here we trace on an attosecond time scale the birth of collective excitations in a finite system and find distinct new features in this regime. Combining quantum chemical computation with quantum kinetic methods we calculate the time-dependent light absorption and refraction in fullerene that serve as indicators for the emergence of collective modes. We explain the numerically calculated novel transient features by an analytical model and point out the relevance for ultra-fast photonic and electronic applications. A scheme is proposed to measure the predicted effects via the emergent attosecond metrology.Comment: 11 pages, 3 figures, accepted in Phys. Rev.

Correlations among superconductivity, structural instability, and band filling in Nb1-xB2 at the critical point x=0.2

We performed an extensive investigation on the correlations among superconductivity, structural instability and band filling in Nb1-xB2 materials. Structural measurements reveal that a notable phase transformation occurs at x=0.2, corresponding to the Fermi level (EF) in the pseudogap with the minimum total density of states (DOS) as demonstrated by the first-principles calculations. Superconductivity in Nb1-xB2 generally becomes visible in the Nb-deficient materials with x=0.2. Electron energy-loss spectroscopy (EELS) measurements on B K-edge directly demonstrated the presence of a chemical shift arising from the structural transformation. Our systematical experimental results in combination with theoretical analysis suggest that the emergence of hole states in the sigma-bands plays an important role for understanding the superconductivity and structural transition in Nb1-xB2.Comment: 16 pages, 4 figure

Compositional analysis of InAs-GaAs-GaSb heterostructures by low-loss electron energy loss spectroscopy

As an alternative to Core-Loss Electron Energy Loss Spectroscopy, Low-Loss EELS is suitable for compositional analysis of complex heterostructures, such as the InAs-GaAs-GaSb system, since in this energy range the edges corresponding to these elements are better defined than in Core-Loss. Furthermore, the analysis of the bulk plasmon peak, which is present in this energy range, also provides information about the composition. In this work, compositional information in an InAs-GaAs-GaSb heterostructure has been obtained from Low-Loss EEL spectra

Evidence against Wolbachia symbiosis in Loa loa

BACKGROUND: The majority of filarial nematode species are host to Wolbachia bacterial endosymbionts, although a few including Acanthocheilonema viteae, Onchocerca flexuosa and Setaria equina have been shown to be free of infection. Comparisons of species with and without symbionts can provide important information on the role of Wolbachia symbiosis in the biology of the nematode hosts and the contribution of the bacteria to the development of disease. Previous studies by electron microscopy and PCR have failed to detect intracellular bacterial infection in Loa loa. Here we use molecular and immunohistological techniques to confirm this finding. METHODS: We have used a combination of PCR amplification of bacterial genes (16S ribosomal DNA [rDNA], ftsZ and Wolbachia surface protein [WSP]) on samples of L. loa adults, third-stage larvae (L3) and microfilariae (mf) and immunohistology on L. loa adults and mf derived from human volunteers to determine the presence or absence of Wolbachia endosymbionts. Samples used in the PCR analysis included 5 adult female worms, 4 adult male worms, 5 mf samples and 2 samples of L3. The quality and purity of nematode DNA was tested by PCR amplification of nematode 5S rDNA and with diagnostic primers from the target species and used to confirm the absence of contamination from Onchocerca sp., Mansonella perstans, M. streptocerca and Wuchereria bancrofti. Immunohistology was carried out by light and electron microscopy on L. loa adults and mf and sections were probed with rabbit antibodies raised to recombinant Brugia malayi Wolbachia WSP. Samples from nematodes known to be infected with Wolbachia (O. volvulus, O. ochengi, Litomosoides sigmodontis and B. malayi) were used as positive controls and A. viteae as a negative control. RESULTS: Single PCR analysis using primer sets for the bacterial genes 16S rDNA, ftsZ, and WSP were negative for all DNA samples from L. loa. Positive PCR reactions were obtained from DNA samples derived from species known to be infected with Wolbachia, which confirmed the suitability of the primers and PCR conditions. The quality and purity of nematode DNA samples was verified by PCR amplification of 5S rDNA and with nematode diagnostic primers. Additional analysis by 'long PCR' failed to produce any further evidence for Wolbachia symbiosis. Immunohistology of L. loa adults and mf confirmed the results of the PCR with no evidence for Wolbachia symbiosis. CONCLUSION: DNA analysis and immunohistology provided no evidence for Wolbachia symbiosis in L. loa

Helium irradiation effects in polycrystalline Si, silica, and single crystal Si

Transmission electron microscopy (TEM) has been used to investigate the effects of room temperature 6 keV helium ion irradiation of a thin (≈55 nm thick) tri-layer consisting of polycrystalline Si, silica, and single-crystal Si. The ion irradiation was carried out in situ within the TEM under conditions where approximately 24% of the incident ions came to rest in the specimen. This paper reports on the comparative development of irradiation-induced defects (primarily helium bubbles) in the polycrystalline Si and single-crystal Si under ion irradiation and provides direct measurement of a radiation-induced increase in the width of the polycrystalline layer and shrinkage of the silica layer. Analysis using TEM and electron energy-loss spectroscopy has led to the hypothesis that these result from helium-bubble-induced swelling of the silicon and radiation-induced viscoelastic flow processes in the silica under the influence of stresses applied by the swollen Si layers. The silicon and silica layers are sputtered as a result of the helium ion irradiation; however, this is estimated to be a relatively minor effect with swelling and stress-related viscoelastic flow being the dominant mechanisms of dimensional change