20 research outputs found
High depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices
No full textHigh depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices
No full textHigh-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms
No full textHigh-depth-resolution Rutherford backscattering data and error analysis of SiGe systems using the simulated annealing and Markov chain Monte Carlo algorithms
No full textEVIDENCE FROM ION CHANNELING IMAGES FOR THE ELASTIC RELAXATION OF A SI0.85GE0.15 LAYER GROWN ON A PATTERNED SI SUBSTRATE
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The elimination of surface cross-hatch from relaxed, limited-area Si<inf>1-x</inf>Ge<inf>x</inf> buffer layers
No full textThe influence of lateral dimensions on the relaxation and surface topography of linearly graded Si1-xGex buffer layers has been investigated. A dramatic change in the relaxation mechanism has been observed for depositions on Si mesa pillars of lateral dimensions 10 μm and below. Misfit dislocations are able to extend unhindered and terminate at the edges of the growth zone, yielding a surface free of cross-hatch. For lateral dimensions in excess of 10 μm orthogonal misfit interactions occur and relaxation is dominated by the modified Frank-Read (MFR) mechanism. The stress fields associated with the MFR dislocation pile-ups result in a pronounced cross-hatch topography. © 1997 American Institute of Physics
