16 research outputs found

    Layer charge instability in unbalanced bilayer systems in the quantum Hall regime

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    Measurements in GaAs hole bilayers with unequal layer densities reveal a pronounced magneto-resistance hysteresis at the magnetic field positions where either the majority or minority layer is at Landau level filling factor one. At a fixed field in the hysteretic regions, the resistance exhibits an unusual time dependence, consisting of random, bidirectional jumps followed by slow relaxations. These anomalies are apparently caused by instabilities in the charge distribution of the two layers.Comment: 4 pages, 4 figure

    Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons

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    Two-dimensional (2D) electrons in an in-plane magnetic field become fully spin polarized above a field B_P, which we can determine from the in-plane magnetoresistance. We perform such measurements in modulation-doped AlAs electron systems, and find that the field B_P increases approximately linearly with 2D electron density. These results imply that the product |g*|m*, where g* is the effective g-factor and m* the effective mass, is a constant essentially independent of density. While the deduced |g*|m* is enhanced relative to its band value by a factor of ~ 4, we see no indication of its divergence as 2D density approaches zero. These observations are at odds with results obtained in Si-MOSFETs, but qualitatively confirm spin polarization studies of 2D GaAs carriers.Comment: 4 pages, 5 figure

    Collapse of ρxx\rho_{xx} ringlike structures in 2DEGs under tilted magnetic fields

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    In the quantum Hall regime, the longitudinal resistivity ρxx\rho_{xx} plotted as a density--magnetic-field (n2DBn_{2D}-B) diagram displays ringlike structures due to the crossings of two sets of spin split Landau levels from different subbands [e.g., Zhang \textit{et al.}, Phys. Rev. Lett. \textbf{95}, 216801 (2005)]. For tilted magnetic fields, some of these ringlike structures "shrink" as the tilt angle is increased and fully collapse at θc6\theta_c \approx 6^\circ. Here we theoretically investigate the topology of these structures via a non-interacting model for the 2DEG. We account for the inter Landau-level coupling induced by the tilted magnetic field via perturbation theory. This coupling results in anti-crossings of Landau levels with parallel spins. With the new energy spectrum, we calculate the corresponding n2DBn_{2D}-B diagram of the density of states (DOS) near the Fermi level. We argue that the DOS displays the same topology as ρxx\rho_{xx} in the n2DBn_{2D}-B diagram. For the ring with filling factor ν=4\nu=4, we find that the anti-crossings make it shrink for increasing tilt angles and collapse at a large enough angle. Using effective parameters to fit the θ=0\theta = 0^\circ data, we find a collapsing angle θc3.6\theta_c \approx 3.6^\circ. Despite this factor-of-two discrepancy with the experimental data, our model captures the essential mechanism underlying the ring collapse.Comment: 3 pages, 2 figures; Proceedings of the PASPS V Conference Held in August 2008 in Foz do Igua\c{c}u, Brazi

    Magnetic field effects on two-dimensional Kagome lattices

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    Magnetic field effects on single-particle energy bands (Hofstadter butterfly), Hall conductance, flat-band ferromagnetism, and magnetoresistance of two-dimensional Kagome lattices are studied. The flat-band ferromagnetism is shown to be broken as the flat-band has finite dispersion in the magnetic field. A metal-insulator transition induced by the magnetic field (giant negative magnetoresistance) is predicted. In the half-filled flat band, the ferromagnetic-paramagnetic transition and the metal-insulator one occur simultaneously at a magnetic field for strongly interacting electrons. All of the important magnetic fields effects should be observable in mesoscopic systems such as quantum dot superlattices.Comment: 10 pages, 4 figures, and 1 tabl

    Magnetization of a two-dimensional electron gas with a second filled subband

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    We have measured the magnetization of a dual-subband two-dimensional electron gas, confined in a GaAs/AlGaAs heterojunction. In contrast to two-dimensional electron gases with a single subband, we observe non-1/B-periodic, triangularly shaped oscillations of the magnetization with an amplitude significantly less than 1μB1 \mu_{\mathrm{B}}^* per electron. All three effects are explained by a field dependent self-consistent model, demonstrating the shape of the magnetization is dominated by oscillations in the confining potential. Additionally, at 1 K, we observe small oscillations at magnetic fields where Landau-levels of the two different subbands cross.Comment: 4 pages, 4 figure

    Spins, charges and currents at Domain Walls in a Quantum Hall Ising Ferromagnet

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    We study spin textures in a quantum Hall Ising ferromagnet. Domain walls between ferro and unpolarized states at ν=2\nu=2 are analyzed with a functional theory supported by a microscopic calculation. In a neutral wall, Hartree repulsion prevents the appearance of a fan phase provoked by a negative stiffness. For a charged system, electrons become trapped as solitons at the domain wall. The size and energy of the solitons are determined by both Hartree and spin-orbit interactions. Finally, we discuss how electrical transport takes place through the domain wall.Comment: 4 pages, 3 figures include

    Role of density imbalance in an interacting bilayer hole system.

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    We study interacting GaAs hole bilayers in the limit of zero interlayer tunneling. When the layers have equal density, we observe a phase-coherent bilayer quantum Hall state (QHS) at a total filling factor 1, flanked by a reentrant insulating phase at nearby fillings which suggests the formation of a pinned, bilayer Wigner crystal. As we transfer charge from one layer to another, the phase-coherent QHS becomes stronger, evincing its robustness against charge imbalance, but the insulating phase disappears, suggesting that its stability requires the commensurability of the two layers

    Interacting GaAs bilayer hole systems with layer density imbalance.

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    We study interacting GaAs hole bilayers in the limit of zero interlayer tunneling. When the layers have equal density, we observe a phase coherent bilayer quantum Hall state (QHS) at total filling factor nu = 1, flanked by a reentrant insulating phase at nearby fillings which suggests the formation of a pinned, bilayer Wigner crystal. As we transfer charge from one layer to another, the phase coherent QHS becomes stronger, while the insulating phase disappears, suggesting that its stability requires the commensurability of the two layers

    Magnetism and pseudo-magnetism in quantum Hall systems.

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    We present the latest results of our transport measurements, in the quantum Hall (QH) regime, in two different systems: AlAs two-dimensional (2D) electrons, and GaAs bilayer 2D hole systems. The magneto-resistance of AlAs 2D electrons exhibits sharp, hysteretic spikes at the crossings of the Landau levels with opposite spin. The spikes signal collective magnetic transitions between the two Ising-like states of the QH ferromagnet at the level crossings. We report a critical behavior in the temperature dependence of the spikes’ width and amplitude, from which we deduce the Curie temperature of the QH ferromagnet. In GaAs bilayer hole systems, when the two layers have unequal densities, we observe a hysteretic magneto-resistance when one of the layers is near = 1 7lling factor. The resistance in the hysteretic 7eld range shows an unusual time dependence, consisting of abrupt jumps and slow relaxations. The data signals an instability in the charge distribution of the two layers
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