2D superconductivity with strong spin-orbit interaction

We consider superconductivity confined at a two-dimensional interface with a strong surface spin-orbit (Rashba) interaction. Some peculiar properties of this system are investigated. In particular, we show that an in-plane Zeeman field can induce a supercurrent flow.Comment: latex, 1 figure in ep

Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and transport equations at the drift-diffusion level of approximation. Spin-polarized electron current and density in the semiconductor are described for four scenarios corresponding to the injection or the collection of spin polarized electrons at Schottky contacts to n-type or p-type semiconductors. The transport properties of the interface are described by a spin-dependent interface resistance, resulting from an interfacial tunneling region. The spin-dependent interface resistance is crucial for achieving spin injection or spin polarization sensitivity in these configurations. We find that the depletion region resulting from Schottky barrier formation at a metal/semiconductor interface is detrimental to both spin injection and spin detection. However, the depletion region can be tailored using a doping density profile to minimize these deleterious effects. For example, a heavily doped region near the interface, such as a delta-doped layer, can be used to form a sharp potential profile through which electrons tunnel to reduce the effective Schottky energy barrier that determines the magnitude of the depletion region. The model results indicate that efficient spin-injection and spin-polarization detection can be achieved in properly designed structures and can serve as a guide for the structure design.Comment: RevTex

Spin Transfer from a Ferromagnet into a Semiconductor through an Oxide barrier

We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the effect disappears. We observe minimum resistance in the antiparallel configurations of the source and drain of Ni. As a possibility, it seems to indicate the existence of a magnetic state at the Si/oxide interface. The average spin diffusion length obtained is of 650 nm approximately. Results are compared to the window of resistances that seems to exist between the tunnel barrier resistance and two threshold resistances but the spin transfer seems to work in the range and outside the two thresholds

Electron Spin Injection at a Schottky Contact

We investigate theoretically electrical spin injection at a Schottky contact between a spin-polarized electrode and a non-magnetic semiconductor. Current and electron density spin-polarizations are discussed as functions of barrier energy and semiconductor doping density. The effect of a spin-dependent interface resistance that results from a tunneling region at the contact/semiconductor interface is described. The model can serve as a guide for designing spin-injection experiments with regard to the interface properties and device structure.Comment: 4 pages, 4 figure

Theory of combined exciton-cyclotron resonance in a two-dimensional electron gas: The strong magnetic field regime

I develop a theory of combined exciton-cyclotron resonance (ExCR) in a low-density two-dimensional electron gas in high magnetic fields. In the presence of excess electrons an incident photon creates an exciton and simultaneously excites one electron to higher-lying Landau levels. I derive exact ExCR selection rules that follow from the existing dynamical symmetries, magnetic translations and rotations about the magnetic field axis. The nature of the final states in the ExCR is elucidated. The relation between ExCR and shake-up processes is discussed. The double-peak ExCR structure for transitions to the first electron Landau level is predicted.Comment: 5 pages, 3 figures, replaced with the published versio

The Rashba Hamiltonian and electron transport

The Rashba Hamiltonian describes the splitting of the conduction band as a result of spin-orbit coupling in the presence of an external field and is commonly used to model the electronic structure of confined narrow-gap semiconductors. Due to the mixing of spin states some care has to be exercised in the calculation of transport properties. We derive the velocity operator for the Rashba-split conduction band and demonstrate that the transmission of an interface between a ferromagnet and a Rashba-split semiconductor does not depend on the magnetization direction, in contrast with previous assertions in the literature.Comment: one tex file, two figures; paper to appear in this form in PRB (RC

Filtering spin with tunnel-coupled electron wave guides

We show how momentum-resolved tunneling between parallel electron wave guides can be used to observe and exploit lifting of spin degeneracy due to Rashba spin-orbit coupling. A device is proposed that achieves spin filtering without using ferromagnets or the Zeeman effect.Comment: 4 pages, 4 figures, RevTex

Dissipation effects in spin-Hall transport of electrons and holes

We investigate the spin-Hall effect of both electrons and holes in semiconductors using the Kubo formula in the correct zero-frequency limit taking into account the finite momentum relaxation time of carriers in real semiconductors. This approach allows to analyze the range of validity of recent theoretical findings. In particular, the spin-Hall conductivity vanishes for vanishing spin-orbit coupling if the correct zero-frequency limit is performed.Comment: 5 pages, no figures, version to appear in Phys. Rev.

Spin Injection in a Ballistic Two-Dimensional Electron Gas

We explore electrically injected, spin polarized transport in a ballistic two-dimensional electron gas. We augment the Buettiker-Landauer picture with a simple, but realistic model for spin-selective contacts to describe multimode reservoir-to-reservoir transport of ballistic spin 1/2 particles. Clear and unambiguous signatures of spin transport are established in this regime, for the simplest measurement configuration that demonstrates them directly. These new effects originate from spin precession of ballistic carriers; they exhibit strong dependence upon device geometry and vanish in the diffusive limit. Our results have important implications for prospective ``spin transistor'' devices.Comment: Submitted to Phys. Rev. Let

Spin transport of electrons through quantum wires with spatially-modulated strength of the Rashba spin-orbit interaction

We study ballistic transport of spin-polarized electrons through quantum wires in which the strength of the Rashba spin-orbit interaction (SOI) is spatially modulated. Subband mixing, due to SOI, between the two lowest subbands is taken into account. Simplified approximate expressions for the transmission are obtained for electron energies close to the bottom of the first subband and near the value for which anticrossing of the two lowest subbands occurs. In structures with periodically varied SOI strength, {\it square-wave} modulation on the spin transmission is found when only one subband is occupied and its possible application to the spin transistor is discussed. When two subbands are occupied the transmission is strongly affected by the existence of SOI interfaces as well as by the subband mixing