The Periodic Instability of Diameter of ZnO Nanowires via a Self-oscillatory Mechanism

ZnO nanowires with a periodic instability of diameter were successfully prepared by a thermal physical vapor deposition method. The morphology of ZnO nanowires was investigated by SEM. SEM shows ZnO possess periodic bead-like structure. The instability only appears when the diameter of ZnO nanowires is small. The kinetics and mechanism of Instability was discussed at length. The appearance of the instability is due to negative feed-back mechanism under certain experimental conditions (crystallization temperature, vapor supersaturation, etc)

GaN and InN nanowires grown by MBE: a comparison

Morphological, optical and transport properties of GaN and InN nanowires grown by molecular beam epitaxy (MBE) have been studied. The differences between the two materials in respect to growth parameters and optimization procedure was stressed. The nanowires crystalline quality has been investigated by means of their optical properties. A comparison of the transport characteristics was given. For each material a band schema was shown, which takes into account transport and optical features and is based on Fermi level pinning at the surface.Comment: 5 pages, 5 figure

Field Emission from As-Grown and Ion-Beam-Sharpened Diamond Particles Deposited on Silicon Tips

Ion-beam bombardment/milling was used for sharpening of diamond particles deposited on ends of silicon tips. Radii curvature of diamond coating down to about 20 nm have been formed in such a way. Field emission experiments with sharpened diamond coated emitters have shown that the ion beam treatment effects a considerable shift of current-voltage characteristics of in the lower voltage region

Electrical properties of ZMR SOI structures with multilayer buried dielectrics

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Field - and Photoassisted Field Emission Studies of Calcium Fluoride Coated Silicon Tips

Measurements of field emission current-voltage and Fowler-Nordheim characteristics of Si tips covered by 100 nm-thick CaF2 epitaxial layers have been for the first time performed. It was found that in spite of dielectric nature of the coating, the tips demonstrate high emissivity comparable with the diamond coated tips. Results of high resolution photoassisted field emission investigations of CaF2/Si structures are presented

Properties of SOI MOSFETs obtained on multilayer buried dielectrics

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