The hall effect — an important diagnostic tool

AbstractThe quantitative measurement of carrier concentrations and mobilities is of vital importance in the assessment of semiconductor materials. One of the best-established methods of doing this relies on the Hall effect, which was discovered as long ago as 1880 by E.H. Hall in his investigations of metals. This article introduces the basic theory of the Hall effect at a fairly elementary level, with a minimum of mathematics, and discusses how it can be used to determine semiconductor parameters. It does not attempt to cover the more advanced developments of the subject, such as the quantum Hall effect

Growth of InSe:Mn semiconductor crystals by Bridgman-Stockbarger technique and analysis of electron irradiation effects on Sn/InSe:Mn Schottky diodes

WOS: 000382221100014Mn-doped p-InSe semiconductor crystals were grown by Bridgman -Stockbarger technique. The crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and fabricated Sn/InSe: Mn Schottky diodes. The current-voltage (I-V) and capacitance-voltage (C-V) measurements of diodes were investigated to determine the response of devices to electron irradiation with 9 MeV energy and 1.2x10(10) e-cm(-2) dose. After irradiation, the ideality factor and barrier height of the Sn/InSe: Mn Schottky diode were determined as 1.66 and 0.85 eV, respectively. Before irradiation, they were determined as 1.37 and 0.90 eV, respectively. It has been concluded that the radiation with high energy may contribute to form defects at the interface of the Sn/InSe:Mn device