Nonlinear evolution of the plasma beatwave: Compressing the laser beatnotes via electromagnetic cascading

The near-resonant beatwave excitation of an electron plasma wave (EPW) can be employed for generating the trains of few-femtosecond electromagnetic (EM) pulses in rarefied plasmas. The EPW produces a co-moving index grating that induces a laser phase modulation at the difference frequency. The bandwidth of the phase-modulated laser is proportional to the product of the plasma length, laser wavelength, and amplitude of the electron density perturbation. The laser spectrum is composed of a cascade of red and blue sidebands shifted by integer multiples of the beat frequency. When the beat frequency is lower than the electron plasma frequency, the red-shifted spectral components are advanced in time with respect to the blue-shifted ones near the center of each laser beatnote. The group velocity dispersion of plasma compresses so chirped beatnotes to a few-laser-cycle duration thus creating a train of sharp EM spikes with the beat periodicity. Depending on the plasma and laser parameters, chirping and compression can be implemented either concurrently in the same, or sequentially in different plasmas. Evolution of the laser beatwave end electron density perturbations is described in time and one spatial dimension in a weakly relativistic approximation. Using the compression effect, we demonstrate that the relativistic bi-stability regime of the EPW excitation [G. Shvets, Phys. Rev. Lett. 93, 195004 (2004)] can be achieved with the initially sub-threshold beatwave pulse.Comment: 13 pages, 11 figures, submitted to Physical Review

Photonic Analogue of Two-dimensional Topological Insulators and Helical One-Way Edge Transport in Bi-Anisotropic Metamaterials

Recent progress in understanding the topological properties of condensed matter has led to the discovery of time-reversal invariant topological insulators. Because of limitations imposed by nature, topologically non-trivial electronic order seems to be uncommon except in small-band-gap semiconductors with strong spin-orbit interactions. In this Article we show that artificial electromagnetic structures, known as metamaterials, provide an attractive platform for designing photonic analogues of topological insulators. We demonstrate that a judicious choice of the metamaterial parameters can create photonic phases that support a pair of helical edge states, and that these edge states enable one-way photonic transport that is robust against disorder.Comment: 13 pages, 3 figure

Investigation of methods used in calculations of solar cell parameters

Analytical expressions have been obtained for extracting the electrical parameters and characteristics of solar cells, including series and shunt resistances, and the saturation current. The method of Lagrange multipliers was used for computing the shape factor of the current–voltage characteristic (CVC) of solar cell. The calculation results demonstrated a satisfactory agreement with experimental data

Technological fabrication features of microwave device with Schottky barriers

At present, research and development of heterojunctions are conducted in the directions of searching for new compositions and technological regimes for the creation of ohmic and barrier transitions for gallium arsenide. The transition to silver-based metallization, which has large thermal and electrical conductivity comparing with gold and a relatively low diffusion coefficient to gallium arsenide, should improve the technical characteristics of the devices. One of the most important technological operations in the formation of Schottky ohmic contacts and barriers is thermal annealing. Silver to gallium arsenide contacts are made in vacuum by the method of thermal evaporation. The deposition and thermal treatment regimes for creating ohmic contacts of Ag–Ge–In/n–n+GaAs with specific contact resistance rc = (5...7)´10–5 W×cm2 are developed. The influence of the substrate temperature during the silver deposition and the annealing temperature on the height of the Schottky barrier Ag/n–n+GaAs, the injection coefficient g and the nonideality factor h is established