1,165 research outputs found
Assessment of capitalization as a management tool of economic development of a region
The article suggests the authors' definition of capitalization of regional economy as a process of effective business usage, increase of revenues and values of complex capital assets of regional economic agents. The functions of capitalization are systematized and peculiarities of their implementation at the regional level are revealed. The authors define and structure the objects of capitalization of regional economyyesBelgorod State Universit
ETIOPATHOGENIC BASES FOR THE FORMATION OF CEREBRAL PALSY IN CHILDREN (REFERENCE REVIEW)
The article shows data on the effect of different factor groups on the development of cerebral palsy in children, it also describes the pathogenetic features of its formation
Gate-dependent non-linear Hall effect at room temperature in topological semimetal GeTe
We experimentally investigate non-linear Hall effect as zero-frequency and
second-harmonic transverse voltage responses to ac electric current for
topological semimetal GeTe. A thick single-crystal GeTe flake is placed on the
Si/SiO substrate, where the p-doped Si layer serves as a gate electrode. We
confirm, that electron concentration is not gate-sensitive in thick GeTe flakes
due to the gate field screening by bulk carriers. In contrast, by transverse
voltage measurements, we demonstrate that the non-linear Hall effect shows
pronounced dependence on the gate electric field at room temperature. Since the
non-linear Hall effect is a direct consequence of a Berry curvature dipole in
topological media, our observations indicate that Berry curvature can be
controlled by the gate electric field. This experimental observation can be
understood as a result of the known dependence of giant Rashba splitting on the
external electric field in GeTe. For possible applications, the zero-frequency
gate-controlled non-linear Hall effect can be used for the efficient broad-band
rectification
Current-induced control of the polarization state in a polar metal based heterostructure SnSe/WTe
The concept of a polar metal proposes new approach of current-induced
polarization control for ferroelectrics. We fabricate SnSe/WTe
heterostructure to experimentally investigate charge transport between two
ferroelectric van der Waals materials with different polarization directions.
WTe is a polar metal with out-of-plane ferroelectric polarization, while
SnSe ferroelectric semiconductor is polarized in-plane, so one should expect
complicated polarization structure at the SnSe/WTe interface. We study
curves, which demonstrate sharp symmetric drop to zero
differential conductance at some threshold bias voltages , which
are nearly symmetric in respect to the bias sign. While the gate electric field
is too small to noticeably affect the carrier concentration, the positive and
negative threshold positions are sensitive to the gate voltage. Also,
SnSe/WTe heterostructure shows re-entrant transition to the low-conductive
state for abrupt change of the bias voltage even below the threshold
values. This behavior can not be observed for single SnSe or WTe flakes, so
we interpret it as a result of the SnSe/WTe interface coupling. In this
case, some threshold value of the electric field at the SnSe/WTe interface
is enough to drive 90 change of the initial SnSe in-plane polarization
in the overlap region. The polarization mismatch leads to the significant
interface resistance contribution, analogously to the scattering of the charge
carriers on the domain walls. Thus, we demonstrate polarization state control
by electron transport through the SnSe/WTe interface
Switching ferroelectricity in SnSe across diffusionless martensitic phase transition
We experimentally investigate transport properties of a hybrid structure,
which consists of a thin single crystal SnSe flake on a top of 5~m spaced
Au leads. The structure initially is in highly-conductive state, while it can
be switched to low-conductive one at high currents due to the Joule heating of
the sample, which should be identified as - -- -
diffusionless martensitic phase transition in SnSe. For highly-conductive
state, there is significant hysteresis in curves at low biases, so
the sample conductance depends on the sign of the applied bias change. This
hysteretic behavior reflects slow relaxation due to additional polarization
current in the ferroelectric SnSe phase, which we confirm by direct measurement
of time-dependent relaxation curves. In contrast, we observe no noticeable
relaxation or low-bias hysteresis for the quenched -
low-conductive phase. Thus, ferroelectric behavior can be switched on or off in
transport through hybrid SnSe structure by controllable - --
- phase transition. This result can also be important for
nonvolatile memory development, e.g. phase change memory for neuromorphic
computations or other applications in artificial intelligence and modern
electronics
Primary dismernoria among teenager girls on the background of non-differentiated dysplasia of connecting tissue
Objective of the study: to identify the features of the primary dysmenorrhea clinic among adolescent girls with connective tissue dysplasia. The mean value of the rank index of pain in the main group is higher than in the comparison group. The emotional component prevailed in the inner picture of the perception of pain. Psycho-emotional status was distinguished by a high level of average score of reactive and personal anxiety. Summary. Systemic pathology associated with connective tissue dysplasia increases the clinical course of primary dysmenorrhea among adolescents, which gives grounds to differentiate the treatment and diagnostic algorith
Genetic determinants of complicated pregnancy
The connections of polymorphic variants of the gene of vasoactive hormones with the level of arterial pressure in pregnant women, depending on the development of preeclampsia (PE), have been studie
The study of the role of maternal and fetal risk factors in the development of placental insufficiency
The objectives were to study the role of maternal and fetal risk factors in the development of placental insufficiency (PI) and fetal growth retardation syndrome (FGRS
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