Nanosized patterns as reference structures for macroscopic transport properties and vortex phases in YBCO films

This paper studies the striking correlation between nanosized structural patterns in YBCO films and macroscopic transport current. A nanosized network of parallel Josephson junctions laced by insulating dislocations is almost mimicking the grain boundary structural network. It contributes to the macroscopic properties and accounts for the strong intergranular pinning across the film in the intermediate temperature range. The correlation between the two networks enables to find out an outstanding scaling law in the (Jc,B) plane and to determine meaningful parameters concerning the matching between the vortex lattice and the intergranular defect lattice. Two asymptotic behaviors of the pinning force below the flux flow regime are checked: the corresponding vortex phases are clearly individuated.Comment: 4 pages, 4 figure

A new apparatus for deep patterning of beam sensitive targets by means of high-energy ion beam

The paper reports on a high precision equipment designed to modify over 3-dimensions (3D) by means of high-energy gold ions the local properties of thin and thick films. A target-moving system aimed at creating patterns across the volume is driven by an x-y writing protocol that allows one to modify beam sensitive samples over micrometer-size regions of whatever shape. The apparatus has a mechanical resolution of 15 nm. The issue of the local fluence measurement has been particularly addressed. The setup has been checked by means of different geometries patterned on beam sensitive sheets as well as on superconducting materials. In the last case the 3D modification consists of amorphous nanostructures. The nanostructures create zones with different dissipative properties with respect to the virgin regions. The main analysis method consists of magneto-optical imaging that provides local information on the electrodynamics of the modified zones. Features typical of non-linear current flow hint at which pattern geometry is more functional to applications in the framework of nanostructures across superconducting films.Comment: 7 page

Nanostructuring of high-TC superconductors into micro-sized zones

A special apparatus was designed in order to “write”, with nanometric resolution, microsize‐confined nanostructures in oxide samples. The nanostructures are produced by high energy heavy ion irradiation that allows nanostructuring the sample over its full thickness. The properties of the nanostructured areas can be further modulated by choosing the proper energy and fluence of the incoming ion beam. We present this set‐up and different kinds of nanostructured patterns created on high temperature superconducting films. We used the magneto‐optical analysis to directly show the effect of the confined nanostructures on the micron scale. The confined nanostructured area, embedded in the virgin matrix, is demonstrated to be a fruitful element for designing a new class of devices

Optical properties of hydrogenated amorphous silicon

A detailed study of the optical properties of sputtered hydrogenated amorphous silicon films with varying hydrogen concentration is presented here. The energy dependence of the absorption coefficient is looked into, in detail, from a point of view of understanding the well known Tauc rule and the alternate relations being proposed in recent years. Spectroscopic and band‐structural models like Wemple-Didomenico and Penn are then utilized to analyze the optical parameters near the band‐gap region of the wavelength spectra. Extensive comparisons of our results are made with those of sputtered a‐Si:H films of other workers, glow discharge prepared a‐Si:H, chemically vapor deposited and evaporated a‐Si, and also crystalline silicon. The similarities in the variation of the optical properties of a‐Si:H with increasing hydrogen concentration (or decreasing measurement temperature) to that of crystalline silicon with decreasing measurement temperature lead us to interesting conclusions. Thus, it seems that decreasing disorder (topological or thermal) in a‐Si:H is equivalent to decreasing thermal disorder in c‐Si, at least as far as the disorder‐optical property relationships are concerned