Giant g factor tuning of long-lived electron spins in Ge

Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms and sizeable coupling between spin and orbital motion of charge carriers. Here we focus on Ge, which, by matching those criteria, is rapidly emerging as a prominent candidate for shuttling spin quantum bits in the mature framework of Si electronics. So far, however, the intrinsic spin-dependent phenomena of free electrons in conventional Ge/Si heterojunctions have proved to be elusive because of epitaxy constraints and an unfavourable band alignment. We overcome such fundamental limitations by investigating a two dimensional electron gas (2DEG) confined in quantum wells of pure Ge grown on SiGe-buffered Si substrates. These epitaxial systems demonstrate exceptionally long spin relaxation and coherence times, eventually unveiling the potential of Ge in bridging the gap between spintronic concepts and semiconductor device physics. In particular, by tuning spin-orbit interaction via quantum confinement we demonstrate that the electron Land\'e g factor and its anisotropy can be engineered in our scalable and CMOS-compatible architectures over a range previously inaccessible for Si spintronics

g-Factor Tuning and Manipulation of Spins by an Electric Current

We investigate the Zeeman splitting of two-dimensional electrons in an asymmetric silicon quantum well, by electron-spin-resonance (ESR) experiments. Applying a small dc current we observe a shift in the resonance field due to the additional current-induced Bychkov-Rashba (BR) type of spin-orbit (SO) field. This finding demonstrates SO coupling in the most straightforward way: in the presence of a transverse electric field the drift velocity of the carriers imposes an effective SO magnetic field. This effect allows selective tuning of the g-factor by an applied dc current. In addition, we show that an ac current may be used to induce spin resonance very efficiently.Comment: 4 pages, 4 figure

Rashba spin-orbit coupling and spin relaxation in silicon quantum wells

Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key parameter for these applications is the spin relaxation time. Here we apply the theory of D'yakonov and Perel' (DP) to calculate the electron spin resonance linewidth of a silicon 2DEG due to structural inversion asymmetry for arbitrary static magnetic field direction at low temperatures. We estimate the Rashba spin-orbit coupling coefficient in silicon quantum wells and find the $T_{1}$ and $T_{2}$ times of the spins from this mechanism as a function of momentum scattering time, magnetic field, and device-specific parameters. We obtain agreement with existing data for the angular dependence of the relaxation times and show that the magnitudes are consistent with the DP mechanism. We suggest how to increase the relaxation times by appropriate device design.Comment: Extended derivations and info, fixed typos and refs, updated figs and data. Worth a re-downloa

Orbital mechanisms of electron spin manipulation by an electric field

A theory of spin manipulation of quasi-two-dimensional (2D) electrons by a time-dependent gate voltage applied to a quantum well is developed. The Dresselhaus and Rashba spin-orbit coupling mechanisms are shown to be rather efficient for this purpose. The spin response to a perpendicular-to-plane electric field is due to a deviation from the strict 2D limit and is controlled by the ratios of the spin, cyclotron and confinement frequencies. The dependence of this response on the magnetic field direction is indicative of the strenghts of the competing spin-orbit coupling mechanisms

Screening Breakdown on the Route toward the Metal-Insulator Transition in Modulation Doped Si/SiGe Quantum Wells

Exploiting the spin resonance of two-dimensional (2D) electrons in SiGe/Si quantum wells we determine the carrier-density-dependence of the magnetic susceptibility. Assuming weak interaction we evaluate the density of states at the Fermi level D(E_F), and the screening wave vector, q_TF. Both are constant at higher carrier densities n, as for an ideal 2D carrier gas. For n < 3e11 cm-2, they decrease and extrapolate to zero at n = 7e10 cm-2. Calculating the mobility from q_TF yields good agreement with experimental values justifying the approach. The decrease in D(E_F) is explained by potential fluctuations which lead to tail states that make screening less efficient and - in a positive feedback - cause an increase of the potential fluctuations. Even in our high mobility samples the fluctuations exceed the electron-electron interaction leading to the formation of puddles of mobile carriers with at least 1 micrometer diameter.Comment: 4 pages, 3 figure

Observations on the distribution, daytime migrations and daily food intake rates of Chaoborus flavicans (Meigen) in the Goggausee [Translation from: Carinthia II 165(85), 184-190, 1975]

The Goggausee, in spite of its modest depth (Zmax = 12 metres), shows meromictic properties: autumn and spring circulation extend only to a depth of 8 metres. The water layers below about 10 metres are constantly oxygen-free, the critical zone with at least intermittent oxygen loss lies at a depth of between 6 and 10 metres. A limnological excursion in May 1974 offered an opportunity to investigate the daily vertical migration of the species Chaoborus flavicans with reference to its food supply of zooplankton as well as the chance to carry out some preliminary experiments on its rate of food intake. Among the studied features were the planktonic depth distribution of Chaoborus flavicans and the food intake of Chaoborus larvae under experimental conditions

Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N

The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.Comment: 12 pages, 14 figures; This version contains the detailed characterization of the crystal structure as well as of the Mn distribution and charge stat

Aspectos econômico-produtivos da atividade leiteira em sistemas de produção de base familiar na região noroeste do Rio Grande do Sul.

A Região Noroeste do Rio Grande do Sul representa um importante pólo de produção leiteira e, a qual está, em grande parte, baseada em unidades familiares. Assim, o objetivo deste trabalho foi caracterizar, analisar e discutir aspectos econômico-produtivos desses sistemas de produção, com enfoque na pecuária leiteira. Interagindo com as famílias de agricultores participantes do Programa Rede Leite, tem-se acompanhado várias unidades produtivas, observando e realizando registros. Nesse estudo, analisaram-se dados provenientes de 29 propriedades, caracterizadas por 18 indicadores econômico-produtivos, utilizando-se como ferramenta a estatística multivariada. Identificou-se a formação de dois tipos básicos de sistemas de produção, diferenciados principalmente pela área total da propriedade, que, por sua vez, condiciona diferenças em outras variáveis. Os agricultores dispõem de variadas estratégias produtivas em função das condições e recursos próprios do sistema. A identificação e caracterização dos tipos de sistemas de produção nos permitem gerar proposições no sentido de melhorar os processos produtivos e conferir maior sustentabilidade

Theory of Electric Dipole Spin Resonance in a Parabolic Quantum Well

A theory of Electric Dipole Spin Resonance (EDSR), that is caused by various mechanisms of spin-orbit coupling, is developed as applied to free electrons in a parabolic quantum well. Choosing a parabolic shape of the well has allowed us to find explicit expressions for the EDSR intensity and its dependence on the magnetic field direction in terms of the basic parameters of the Hamiltonian. By using these expressions, we have investigated and compared the effect of specific mechanisms of spin orbit (SO) coupling and different polarizations of ac electric field on the intensity of EDSR. Angular dependences of the EDSR intensity are indicative of the relative contributions of the competing mechanisms of SO coupling. Our results show that electrical manipulating electron spins in quantum wells is generally highly efficient, especially by an in-plane ac electric field.Comment: 45 pages 6 figur