Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins

Phosphorus-doped silicon single crystals with 0.19 % <= f <= 99.2 %, where f is the concentration of 29^Si isotopes, are measured at 8 K using a pulsed electron spin resonance technique, thereby the effect of environmental 29^Si nuclear spins on the donor electron spin is systematically studied. The linewidth as a function of f shows a good agreement with theoretical analysis. We also report the phase memory time T_M of the donor electron spin dependent on both f and the crystal axis relative to the external magnetic field.Comment: 5 pages, 4 figure

Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

Electron Paramagnetic Resonance (EPR) was used to study defects in n-type 3C-SiC films irradiated by 3-MeV electrons at room temperature with a dose of 2×1018 cm-2. After electron irradiation, two new EPR spectra with an effective spin S = 1, labeled L5 and L6, were observed. The L5 center has C3v symmetry with g = 2.004 and a fine-structure parameter D = 436.5×10-4 cm-1. The L5 spectrum was only detected under light illumination and it could not be detected after annealing at ~550°C. The principal z-axis of the D tensor is parallel to the -directions, indicating the location of spins along the Si-C bonds. Judging from the symmetry and the fact that the signal was detected under illumination in n-type material, the L5 center may be related to the divacancy in the neutral charge state. The L6 center has a C2v-symmetry with an isotropic g-value of g = 2.003 and the fine structure parameters D = 547.7×10-4 cm-1 and E = 56.2×10-4 cm-1. The L6 center disappeared after annealing at a rather low temperature (~200°C), which is substantially lower than the known annealing temperatures for vacancy-related defects in 3C-SiC. This highly mobile defect may be related to carbon interstitials

Identification of the Carbon Antisite-Vacancy Pair in 4H-SiC

The metastability of vacancies was theoretically predicted for several compound semiconductors alongside their transformation into the antisite-vacancy pair counterpart; however, no experiment to date has unambiguously confirmed the existence of antisite-vacancy pairs. Using electron paramagnetic resonance and first principles calculations we identify the SI5 center as the carbon antisite-vacancy pair in the negative charge state (CSiVC-) in 4H-SiC. We suggest that this defect is a strong carrier-compensating center in n-type or high-purity semi-insulating SiC

Magnetic trapping of metastable 3P2^3P_2 atomic strontium

We report the magnetic trapping of metastable $^3P_2$ atomic strontium. Atoms are cooled in a magneto-optical trap (MOT) operating on the dipole allowed $^1S_0-^1P_1$ transition at 461 nm. Decay via $^1P_1\to {^1D_2}\to {^3P_2}$ continuously loads a magnetic trap formed by the quadrupole magnetic field of the MOT. Over $10^8$ atoms at a density of $8 \times 10^9$ cm$^{-3}$ and temperature of 1 mK are trapped. The atom temperature is significantly lower than what would be expected from the kinetic and potential energy of atoms as they are transferred from the MOT. This suggests that thermalization and evaporative cooling are occurring in the magnetic trap.Comment: This paper has been accepted by PR