Efficacité de l'éducation thérapeutique chez les enfants atteints de cancer et leur famille : une revue systématique

Présentation dans le cadre d'une demi-journée de Recherch

Mapping Polarization Fields in Al0.85In0.15N/AlN/GaN Heterostructures

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 - July 30, 200

Spontaneous Polarisation Build up in a Room Temperature Polariton Laser

We observe the build up of strong (~50%) spontaneous vector polarisation in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stokes vector of emitted light changes its orientation randomly from one excitation pulse to another, so that the time-integrated polarisation remains zero. This behaviour is completely different to any previous laser. We interpret this observation in terms of the spontaneous symmetry breaking in a Bose-Einstein condensate of exciton-polaritons

Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN∕GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at ∼420nm is achieved under pulsed excitation at room temperature for a peak power density of 400kW/cm2. The lasing emission linewidth is down to 0.033nm

Lattice matched GaN/InAlN waveguides at λ = 1.55 μm grown by metalorganic vapor phase epitaxy

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab-like WGs propagation losses are below 3 dB/mm and independent of light polarization. For 2.6-μm-wide WGs the propagation losses in the 1.5- to 1.58-μm spectral region are as low as 1.8 and 4.9 dB/mm for transverse-electric- and transverse-magnetic-polarization, respectively. The losses are attributed to the sidewall roughness and can be further reduced by the optimization of the etching process

High spatial resolution picosecond cathodoluminescence of InGaN quantum wells

The authors have studied InxGa1-xN/GaN (x approximate to 15%) quantum wells (QWs) using atomic force microscopy (AFM) and picosecond time resolved cathodoluminescence (pTRCL) measurements. They observed a contrast inversion between monochromatic CL maps corresponding to the high energy side (3.13 eV) and the low energy side (3.07 eV) of the QW luminescence peak. In perfect correlation with CL images, AFM images clearly show regions where the QW thickness almost decreases to zero. Pronounced spectral diffusion from high energy thinner regions to low energy thicker regions is observed in pTRCL, providing a possible explanation for the hindering of nonradiative recombination at dislocations. (c) 2006 American Institute of Physics

A microLed imager for AR headset for use in high luminance environment

Today, popular Augmented Reality headsets suffer from a lack of brightness to allow the diffusion of readable information against a very bright landscape, in particular for avionics use, and more generally, outdoor applications.We present in this paper, the project “HiLICo”, aiming to develop an emissive GaN micro-displays with 1640 x 1032 pixel resolution (WUXGA), 9.5-|jm pixel pitch, very high brightness (over 1Mcd/ cm2) and good form factor capabilities that will enable the design of ground breaking compact see-through system for next generation Avionics applications