119 research outputs found
Weak antilocalization in quantum wells in tilted magnetic fields
Weak antilocalization is studied in an InGaAs quantum well. Anomalous
magnetoresistance is measured and described theoretically in fields
perpendicular, tilted and parallel to the quantum well plane. Spin and phase
relaxation times are found as functions of temperature and parallel field. It
is demonstrated that spin dephasing is due to the Dresselhaus spin-orbit
interaction. The values of electron spin splittings and spin relaxation times
are found in the wide range of 2D density. Application of in-plane field is
shown to destroy weak antilocalization due to competition of Zeeman and
microroughness effects. Their relative contributions are separated, and the
values of the in-plane electron g-factor and characteristic size of interface
imperfections are found.Comment: 8 pages, 8 figure
Hole-hole interaction in a strained InGaAs two dimensional system
The interaction correction to the conductivity of 2D hole gas in strained
GaAs/InGaAs/GaAs quantum well structures was studied. It is shown
that the Zeeman splitting, spin relaxation and ballistic contribution should be
taking into account for reliable determination of the Fermi-liquid constant
. The proper consideration of these effects allows us to describe
both th temperature and magnetic field dependences of the conductivity and find
the value of .Comment: 7 pages, 6 figure
Role of doped layers in dephasing of 2D electrons in quantum well structures
The temperature and gate voltage dependences of the phase breaking time are
studied experimentally in GaAs/InGaAs heterostructures with single quantum
well. It is shown that appearance of states at the Fermi energy in the doped
layers leads to a significant decrease of the phase breaking time of the
carriers in quantum well and to saturation of the phase breaking time at low
temperature.Comment: 4 pages, 6 figure
Interference induced metallic-like behavior of a two-dimensional hole gas in asymmetric GaAs/InGaAs/GaAs quantum well
The temperature and magnetic field dependences of the conductivity of the
heterostructures with asymmetric InGaAs quantum well are studied.
It is shown that the metallic-like temperature dependence of the conductivity
observed in the structures investigated is quantitatively understandable within
the whole temperature range, K. It is caused by the interference
quantum correction at fast spin relaxation for 0.4 K K. At higher
temperatures, 1.5 K K, it is due to the interaction quantum correction.
Finally, at K, the metallic-like behavior is determined by the phonon
scattering.Comment: 4 pages, 4 figure
Diffusion and ballistic contributions of the interaction correction to the conductivity of a two-dimensional electron gas
The results of an experimental study of interaction quantum correction to the
conductivity of two-dimensional electron gas in AB semiconductor
quantum well heterostructures are presented for a wide range of
-parameter (), where is the transport
relaxation time. A comprehensive analysis of the magnetic field and temperature
dependences of the resistivity and the conductivity tensor components allows us
to separate the ballistic and diffusion parts of the correction. It is shown
that the ballistic part renormalizes in the main the electron mobility, whereas
the diffusion part contributes to the diagonal and does not to the off-diagonal
component of the conductivity tensor. We have experimentally found the values
of the Fermi-liquid parameters describing the electron-electron contribution to
the transport coefficients, which are found in a good agreement with the
theoretical results.Comment: 11 pages, 11 figure
- …