Symmetry dependence of phonon lineshapes in superconductors with anisotropic gaps

The temperature dependence below $T_{c}$ of the lineshape of optical phonons of different symmetry as seen in Raman scattering is investigated for superconductors with anisotropic energy gaps. It is shown that the symmetry of the electron-phonon vertex produces non-trivial couplings to an anisotropic energy gap which leads to unique changes in the phonon lineshape for phonons of different symmetry. The phonon lineshape is calculated in detail for $B_{1g}$ and $A_{1g}$ phonons in a superconductor with $d_{x^{2}-y^{2}}$ pairing symmetry. The role of satellite peaks generated by the electron-phonon coupling are also addressed. The theory accounts for the substantial phonon narrowing of the $B_{1g}$ phonon, while narrowing of the $A_{1g}$ phonon which is indistinguishable from the normal state is shown, in agreement with recent measurements on BSCCO.Comment: 15 pages (3 Figures available upon request), Revtex, 1

Hole concentration and phonon renormalization in Ca-doped YBa_2Cu_3O_y (6.76 < y < 7.00)

In order to access the overdoped regime of the YBa_2Cu_3O_y phase diagram, 2% Ca is substituted for Y in YBa_2Cu_3O_y (y = 7.00,6.93,6.88,6.76). Raman scattering studies have been carried out on these four single crystals. Measurements of the superconductivity-induced renormalization in frequency (Delta \omega) and linewidth (\Delta 2\gamma) of the 340 cm^{-1} B_{1g} phonon demonstrate that the magnitude of the renormalization is directly related to the hole concentration (p), and not simply the oxygen content. The changes in \Delta \omega with p imply that the superconducting gap (\Delta_{max}) decreases monotonically with increasing hole concentration in the overdoped regime, and \Delta \omega falls to zero in the underdoped regime. The linewidth renormalization \Delta 2\gamma is negative in the underdoped regime, crossing over at optimal doping to a positive value in the overdoped state.Comment: 18 pages; 5 figures; submitted to Phys. Rev. B Oct. 24, 2002 (BX8292

Nernst Effect and Superconducting Fluctuations in Zn-doped YBa2_{2}Cu3_{3}O7−δ_{7-\delta}

We report the measurements of in-plane resistivity, Hall effect, and Nernst effect in Zn doped YBa$_{2}$Cu$_{3}$O$_{7-\delta}$ epitaxial thin films grown by pulsed laser deposition technique. The pseudogap temperature, $T^*$, determined from the temperature dependence of resistivity, does not change significantly with Zn doping. Meanwhile the onset temperature ($T^{\nu}$) of anomalous Nernst signal above $T_{c0}$, which is interpreted as evidence for vortex-like excitations, decreases sharply as the superconducting transition temperature $T_{c0}$ does. A significant decrease in the maximum of vortex Nernst signal in mixed state is also observed, which is consistent with the scenario that Zn impurities cause a decrease in the superfluid density and therefore suppress the superconductivity. The phase diagram of $T^*$, $T^{\nu}$, and $T_{c0}$ versus Zn content is presented and discussed.Comment: 6 pages, 5 figures, Latex; v2: to be published in PR

Strain dependent transport properties of the quasi two-dimensional correlated metal, LaNiO3_{3}

We explore the electrical transport and magneto-conductance in quasi two-dimensional strongly correlated ultrathin films of LaNiO$_{3}$ (LNO) to investigate the effect of hetero-epitaxial strain on electron-electron and electron-lattice interactions from the low to intermediate temperature range (2K$\sim$170K). The fully epitaxial 10 unit cell thick films spanning tensile strain up to $\sim4$ are used to investigate effects of enhanced carrier localization driven by a combination of weak localization and electron-electron interactions at low temperatures. The magneto-conductance data shows the importance of the increased contribution of weak localization to low temperature quantum corrections. The obtained results demonstrate that with increasing tensile strain and reduced temperature the quantum confined LNO system gradually evolves from the Mott into the Mott-Anderson regime

Epitaxial and layer-by-layer growth of EuO thin films on yttria-stabilized cubic zirconia (001) using MBE distillation

We have succeeded in growing epitaxial and highly stoichiometric films of EuO on yttria-stabilized cubic zirconia (YSZ) (001). The use of the Eu-distillation process during the molecular beam epitaxy assisted growth enables the consistent achievement of stoichiometry. We have also succeeded in growing the films in a layer-by-layer fashion by fine tuning the Eu vs. oxygen deposition rates. The initial stages of growth involve the limited supply of oxygen from the YSZ substrate, but the EuO stoichiometry can still be well maintained. The films grown were sufficiently smooth so that the capping with a thin layer of aluminum was leak tight and enabled ex situ experiments free from trivalent Eu species. The findings were used to obtain recipes for better epitaxial growth of EuO on MgO (001).Comment: 10 pages, 15 figure

Epitaxy, stoichiometry, and magnetic properties of Gd-doped EuO films on YSZ (001)

We have succeeded in preparing high-quality Gd-doped single-crystalline EuO films. Using Eu-distillation-assisted molecular beam epitaxy and a systematic variation in the Gd and oxygen deposition rates, we have been able to observe sustained layer-by-layer epitaxial growth on yttria-stabilized cubic zirconia (001). The presence of Gd helps to stabilize the layer-by-layer growth mode. We used soft x-ray absorption spectroscopy at the Eu and Gd M4,5 edges to confirm the absence of Eu3+ contaminants and to determine the actual Gd concentration. The distillation process ensures the absence of oxygen vacancies in the films. From magnetization measurements we found the Curie temperature to increase smoothly as a function of doping from 70 K up to a maximum of 125 K. A threshold behavior was not observed for concentrations as low as 0.2%.Comment: 8 pages, 9 figure