46,316 research outputs found
Bilayer graphene: gap tunability and edge properties
Bilayer graphene -- two coupled single graphene layers stacked as in graphite
-- provides the only known semiconductor with a gap that can be tuned
externally through electric field effect. Here we use a tight binding approach
to study how the gap changes with the applied electric field. Within a parallel
plate capacitor model and taking into account screening of the external field,
we describe real back gated and/or chemically doped bilayer devices. We show
that a gap between zero and midinfrared energies can be induced and externally
tuned in these devices, making bilayer graphene very appealing from the point
of view of applications. However, applications to nanotechnology require
careful treatment of the effect of sample boundaries. This being particularly
true in graphene, where the presence of edge states at zero energy -- the Fermi
level of the undoped system -- has been extensively reported. Here we show that
also bilayer graphene supports surface states localized at zigzag edges. The
presence of two layers, however, allows for a new type of edge state which
shows an enhanced penetration into the bulk and gives rise to band crossing
phenomenon inside the gap of the biased bilayer system.Comment: 8 pages, 3 fugures, Proceedings of the International Conference on
Theoretical Physics: Dubna-Nano200
The role of pressure on the magnetism of bilayer graphene
We study the effect of pressure on the localized magnetic moments induced by
vacancies in bilayer graphene in the presence of topological defects breaking
the bipartite nature of the lattice. By using a mean-field Hubbard model we
address the two inequivalent types of vacancies that appear in the Bernal
stacking bilayer graphene. We find that by applying pressure in the direction
perpendicular to the layers the critical value of the Hubbard interaction
needed to polarize the system decreases. The effect is particularly enhanced
for one type of vacancies, and admits straightforward generalization to
multilayer graphene in Bernal stacking and graphite. The present results
clearly demonstrate that the magnetic behavior of multilayer graphene can be
affected by mechanical transverse deformation
Super Five Brane Hamiltonian and the Chiral Degrees of Freedom
We construct the Hamiltonian of the super five brane in terms of its physical
degrees of freedom. It does not depend on the inverse of the induced metric.
Consequently, some singular configurations are physically admissible, implying
an interpretation of the theory as a multiparticle one. The symmetries of the
theory are analyzed from the canonical point of view in terms of the first and
second class constraints. In particular it is shown how the chiral sector may
be canonically reduced to its physical degrees of freedom.Comment: 16 pages, typos correcte
Mean-Field and Non-Mean-Field Behaviors in Scale-free Networks with Random Boolean Dynamics
We study two types of simplified Boolean dynamics over scale-free networks,
both with synchronous update. Assigning only Boolean functions AND and XOR to
the nodes with probability and , respectively, we are able to analyze
the density of 1's and the Hamming distance on the network by numerical
simulations and by a mean-field approximation (annealed approximation). We show
that the behavior is quite different if the node always enters in the dynamic
as its own input (self-regulation) or not. The same conclusion holds for the
Kauffman KN model. Moreover, the simulation results and the mean-field ones (i)
agree well when there is no self-regulation, and (ii) disagree for small
when self-regulation is present in the model.Comment: 12 pages, 7 figure
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