10 research outputs found

    A Comparison Between GaAs Mesfet and Si NMOS ESD Behaviour

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    Work is in hand at Loughborough University to investigate and compare the ESD sensitivity of GaAs D-MESFETs and unprotected enhancement mode NMOS structures

    Avalanche-Induced Current Enhancement in Semiconducting Carbon Nanotubes

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    Semiconducting carbon nanotubes under high electric field stress (~10 V/um) display a striking, exponential current increase due to avalanche generation of free electrons and holes. Unlike in other materials, the avalanche process in such 1D quantum wires involves access to the third sub-band, is insensitive to temperature, but strongly dependent on diameter ~exp(-1/d^2). Comparison with a theoretical model yields a novel approach to obtain the inelastic optical phonon emission length, L_OP,ems ~ 15d nm. The combined results underscore the importance of multi-band transport in 1D molecular wires

    Quality and Reliability Assurance During the Production Phase (Basic Considerations)

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