325 research outputs found
Strain-driven light polarization switching in deep ultraviolet nitride emitters
Residual strain plays a critical role in determining the crystalline quality
of nitride epitaxial layers and in modifying their band structure; this often
leads to several interesting physical phenomena. It is found, for example, that
compressive strain in AlxGa1-xN layers grown on AlyGa1-yN (x<y) templates
results in an anti-crossing of the valence bands at considerably much higher Al
composition than expected. This happens even in the presence of large and
negative crystal field splitting energy for AlxGa1-xN layers. A judicious
magnitude of the compressive strain can support vertical light emission (out of
the c-plane) from AlxGa1-xN quantum wells up to x\approx 0.80, which is
desirable for the development of deep ultraviolet light-emitting diodes
designed to operate below 250nm with transverse electric polarization
characteristics
Personal Jurisdiction over Non-Residents and Montana\u27s New Rule 4B
Personal Jurisdiction Over Non-Residents and Montana\u27s New Rule 4
Workmen’s Compensation Award Cannot Be Based Solely upon Claimant’s Uncorroborated Testimony
Workmen’s Compensation Award Cannot be Based Solely Upon Claimant’s Uncorroborated Testimony (Brecktold v. Industrial Accident Board, Mont. 1960
Unavoidable Accident Instruction Held Reversible Error in Negligence Actions
Unavoidable Accident Instruction Held Reversible Error in Negligence Actions (Leach v. Great Northern Ry. Co., Mont. 1961
Unavoidable Accident Instruction Held Reversible Error in Negligence Actions
Unavoidable Accident Instruction Held Reversible Error in Negligence Actions (Leach v. Great Northern Ry. Co., Mont. 1961
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