Quantum Size Effect in Conductivity of Multilayer Metal Films

Conductivity of quantized multilayer metal films is analyzed with an emphasis on scattering by rough interlayer interfaces. Three different types of quantum size effect (QSE) in conductivity are predicted. Two of these QSE are similar to those in films with scattering by rough walls. The third type of QSE is unique and is observed only for certain positions of the interface. The corresponding peaks in conductivity are very narrow and high with a finite cutoff which is due only to some other scattering mechanism or the smearing of the interface. There are two classes of these geometric resonances. Some of the resonance positions of the interface are universal and do not depend on the strength of the interface potential while the others are sensitive to this potential. This geometric QSE gradually disappears with an increase in the width of the interlayer potential barrier.Comment: 12 pages, 10 figures, RevTeX4, to be published in Phys. Rev B (April 2003

On the uniqueness of higher-spin symmetries in AdS and CFT

We study the uniqueness of higher-spin algebras which are at the core of higher-spin theories in AdS and of CFTs with exact higher-spin symmetry, i.e. conserved tensors of rank greater than two. The Jacobi identity for the gauge algebra is the simplest consistency test that appears at the quartic order for a gauge theory. Similarly, the algebra of charges in a CFT must also obey the Jacobi identity. These algebras are essentially the same. Solving the Jacobi identity under some simplifying assumptions spelled out, we obtain that the Eastwood-Vasiliev algebra is the unique solution for d=4 and d>6. In 5d there is a one-parameter family of algebras that was known before. In particular, we show that the introduction of a single higher-spin gauge field/current automatically requires the infinite tower of higher-spin gauge fields/currents. The result implies that from all the admissible non-Abelian cubic vertices in AdS(d), that have been recently classified for totally symmetric higher-spin gauge fields, only one vertex can pass the Jacobi consistency test. This cubic vertex is associated with a gauge deformation that is the germ of the Eastwood-Vasiliev's higher-spin algebra.Comment: 37 pages; refs added, proof of uniquiness was improve

Non-abelian cubic vertices for higher-spin fields in AdS(d)

We use the Fradkin-Vasiliev procedure to construct the full set of non-abelian cubic vertices for totally symmetric higher spin gauge fields in anti-de Sitter space. The number of such vertices is given by a certain tensor-product multiplicity. We discuss the one-to-one relation between our result and the list of non-abelian gauge deformations in flat space obtained elsewhere via the cohomological approach. We comment about the uniqueness of Vasiliev's simplest higher-spin algebra in relation with the (non)associativity properties of the gauge algebras that we classified. The gravitational interactions for (partially)-massless (mixed)-symmetry fields are also discussed. We also argue that those mixed-symmetry and/or partially-massless fields that are described by one-form connections within the frame-like approach can have nonabelian interactions among themselves and again the number of nonabelian vertices should be given by tensor product multiplicities

Self-organized pore formation and open-loop-control in semiconductor etching

Electrochemical etching of semiconductors, apart from many technical applications, provides an interesting experimental setup for self-organized structure formation capable e.g. of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed to occur inhomogeneously in time and space as a Current Burst (CB); the properties and interactions between CB's are described by a number of material- and chemistry- dependent ingredients, like passivation and aging of surfaces in different crystallographic orientations, giving a qualitative understanding of resulting pore morphologies. These morphologies cannot be influenced only by the current, by chemical, material and other etching conditions, but also by an open-loop control, triggering the time scale given by the oxide dissolution time. With this method, under conditions where only branching pores occur, the additional signal hinders side pore formation resulting in regular pores with modulated diameter