GaAs a key RF technology - Industrialisation & competition

GaAs components in MESFET, HEMT and HBT technology are a valuable supplement to traditional Si RF technologies and cover 15 to 20% of all RF applications. Their major application potential is in power amplifiers for mobile communication as well as WLAN and WLL transceiver circuits. Moreover, at MMW frequencies new applications like radio links, SATCOM and car distance radar support the introduction of GaAs hetero devices. Production quantities of about 100 million pcs and annual growth rates of about 30% clearly require large volume production strategies and cost positions well-known from Si counter­parts

Technical and commercial aspects of GaAs MMICs for enhanced mobile communication.

The mobile communication market is the current driving force of the European telecommunication industry with remarkable growth rates. In March 1990 about 2.5 million mobile communication systems have found application in Europe with a forecast of more than 90 million DECT-GSM-PCN systems up to the year 2000. This situation is of great benefit for the semiconductor industry in general and the GaAs components suppliers especially. The reason is that GaAs components maintain their sophisticated performance - low NF and high PAE -under the stringent low power consumption conditions of a handheld. Moreover, the established low-loss GaAs MMIC technology allows in the meantime the production of small SMDs at a reasonable price. In the following, we describe a complete set of GaAs and Silicon devices suitable for the new digital communication systems

GaAs devices for new mobile communication systems application

A set of GaAs SMD devices has been developed for use in the new european mobile communication equipment, i.e. for DECT and PCN at 1900 and 1800 MHz, respectively. These devices cover the rf part of mobile communication terminals. The devices considered are a GaAs LNC chip for the receiver part, an upconversion mixer MMIC, a prescaler and GaAs power MESFETs as end-stages for the transmitter. The complete DECT, PCN block circuit including GaAs and Si devices will be described

Integrierte Mikrowellen-Receiverkomponenten in GaAs-Technologie Schlussbericht. Abschlussdatum: Juni 1984

TIB: RN 2598 (85-159) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman

Integrierte Mikrowellen-Receiverkomponenten in GaAs-Technologie Schlussbericht

With 99 refs., 15 tabs. and 40 figs.SIGLECopy held by FIZ Karlsruhe; available from UB/TIB Hannover / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekDEGerman

Mikroelektronik Positionssensoren Schlussbericht

With 92 figs., 26 refs. and 9 tabs.SIGLEDEGerman

Hochtemperatur-Positionssensoren auf der Basis eines monolithischen GaAs Hall-IC Schlussbericht. Abschlussdatum: Maerz 1984

TIB: RN 2598 (84-266)+a / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische InformationsbibliothekSIGLEDEGerman