7 research outputs found
The comparative electrical characteristics of Au/n-Si (MS) diodes with and without a 2% graphene cobalt-doped Ca3Co4Ga0.001Ox interfacial layer at room temperature
No full textCurrent-Transport Mechanisms of the Al/(Bi2S3-PVA Nanocomposite)/p-Si Schottky Diodes in the Temperature Range Between 220 K and 380 K
No full textDetection of current transport mechanisms for graphene-doped-PVA interlayered metal/semiconductor structures
No full textThe electrical properties of photodiodes based on nanostructure gallium doped cadmium oxide/p-type silicon junctions
No full textDouble exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range
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