Amplifier for measuring low-level signals in the presence of high common mode voltage

A high common mode rejection differential amplifier wherein two serially arranged Darlington amplifier stages are employed and any common mode voltage is divided between them by a resistance network. The input to the first Darlington amplifier stage is coupled to a signal input resistor via an amplifier which isolates the input and presents a high impedance across this resistor. The output of the second Darlington stage is transposed in scale via an amplifier stage which has its input a biasing circuit which effects a finite biasing of the two Darlington amplifier stages

Effect of Measurement on the Periodicity of the Coulomb Staircase of a Superconducting Box

We report on the effect of the back-action of a Single Cooper Pair Transistor electrometer (E) on the measurement of charge on the island of a superconducting box (B). The charge is e-periodic in the gate bias of B when E is operated near voltages 2Delta/e or 4Delta/e. We show that this is due to quasiparticle poisoning of B at a rate proportional to the number of quasiparticle tunneling events in E per second. We are able to eliminate this back action and recover 2e charge periodicity using a new measurement method based on switching current modulation of E.Comment: 4 pages, 4 figures, revised versio

Development of neutron activation analysis procedures for the determination of oxygen in potassium final report, period ending 15 dec. 1964

Neutron activation analysis for determination of oxygen in potassiu

Observation of Strong Coulomb Blockade in Resistively Isolated Tunnel Junctions

We report measurements of the Coulomb-blockade current in resistively isolated (R_{Isol} >> h/e^{2}) tunnel junctions for the temperature range 60mK $We report measurements of the Coulomb-blockade current in resistively isolated ($R_{Isol}\gg h/e^{2})$ tunnel junctions for the temperature range 60mK < T < 230mK where the charging energy E_{c} is much greater than the thermal energy. A zero-bias resistance R_{0} of up to 10^{4}R_{T} (the tunnel resistance of the bare junction) is obtained. For eV << E_{c}, the I-V curves for a given R_{Isol} scale as a function of V/T, with I \propto V^{\alpha (R_{Isol})} over a range of V. The data agree well with numerical calculations of the tunneling rate that include environmental effects.Comment: 13 pages, 3 eps figure

Radiation Due to Josephson Oscillations in Layered Superconductors

We derive the power of direct radiation into free space induced by Josephson oscillations in intrinsic Josephson junctions of highly anisotropic layered superconductors. We consider the super-radiation regime for a crystal cut in the form of a thin slice parallel to the c-axis. We find that the radiation correction to the current-voltage characteristic in this regime depends only on crystal shape. We show that at large enough number of junctions oscillations are synchronized providing high radiation power and efficiency in the THz frequency range. We discuss crystal parameters and bias current optimal for radiation power and crystal cooling.Comment: 4 pages, 1 figure, to be published in Phys. Rev. Let

Temperature Dependence of Critical Current Fluctuations in Nb/AlOx\mathrm{_{x}}/Nb Josephson Junctions

We have measured the low frequency critical current noise in Nb/AlO$_{\mathrm{x}}$/Nb Josephson junctions. Unshunted junctions biased above the gap voltage and resistively shunted junctions biased near the critical current, $I_{c}$, have been measured. For both, the spectral density of $\delta I_{c}/I_{c}$, $S_{i_{c}}(f)$, is proportional to $1/f$, scales inversely as the area, $A$, and is independent of $J_{c} \equiv I_{c}/A$ over a factor of nearly 20 in $J_{c}$. For all devices measured at 4.2 K, $S_{i_{c}}$(1 Hz)$= 2.0 \pm 0.4 \cdot 10^{-12}$/Hz when scaled to A=1 $\mu$m$^{2}$. We find that, from 4.2 K to 0.46 K, $S_{i_{c}}(f)$ decreases linearly with temperature