Searching for bacteria in sticky situations:Methods for investigating bacterial survival at solid-air interfaces involving Wyoming MX-80 bentonite

Effective removal of prokaryotic cells from clay interfaces such as bentonite is essential for quantitative assessment of microbial communities, considering that strong bentonite clay-DNA and –RNA complexes challenge the use of molecular-based techniques. In this study, aerobic bacteria were isolated from Wyoming MX-80 bentonite and sequenced for identification (16S rRNA). A glass-bentonite substrate and sterile bentonite powder were inoculated with Arthrobacter sp. (isolated from bentonite) to test cell removal efficiency using sonication and vortexing. Manipulation of pH (pH 7 versus pH 9) did not affect cell removal efficiency, while changes in temperature within limits (15–37 °C) did affect cell removal efficiency. To evaluate microbial survival during desiccation, bacterial isolates were inoculated onto glass and bentonite-covered glass coverslip substrates, and particulate bentonite. Substrates were desiccated, and cells were removed by vortexing at different time points over 31 days. Abundance of viable cells followed a first-order rate of decrease. Vegetative desiccation-tolerant Arthrobacter sp. isolates from bentonite clay had lower loss of viable, culturable cells (0.07 d−1 to 0.89 d−1) than did a Bacillus sp. isolate (&gt;1 d−1) or a Pseudomonas stutzeri isolate (0.79 to &gt;1 d−1), suggesting Arthrobacter sp. may be more tolerant of these prolonged periods of desiccation on the bentonite-air interface. Tolerance to matric stress by microorganisms varies depending on the cellular adaptation of the target species, the physical and chemical properties of the given solid-air environment, as well as the employed population and community-based survival mechanisms.</p

Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy

We have used admittance spectroscopy to measure conduction-band and valence-band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Valence-band offsets measured for Si/Si1–xGex heterojunctions were in excellent agreement with previously reported values. Incorporation of C into Si1–x–yGexCy lowers the valence- and conduction-band-edge energies compared to those in Si1–xGex with the same Ge concentration. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicate that the band alignment is Type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Electronic properties of Si/Si1–x–yGexCy heterojunctions

We have used admittance spectroscopy and deep-level transient spectroscopy to characterize electronic properties of Si/Si1–x–yGexCy heterostructures. Band offsets measured by admittance spectroscopy for compressively strained Si/Si1–x–yGexCy heterojunctions indicate that incorporation of C into Si1–x–yGexCy lowers both the valence- and conduction-band edges compared to those in Si1–xGex by an average of 107 ± 6 meV/% C and 75 ± 6 meV/% C, respectively. Combining these measurements indicates that the band alignment is type I for the compositions we have studied, and that these results are consistent with previously reported results on the energy band gap of Si1–x–yGexCy and with measurements of conduction band offsets in Si/Si1–yCy heterojunctions. Several electron traps were observed using deep-level transient spectroscopy on two n-type heterostructures. Despite the presence of a significant amount of nonsubstitutional C (0.29–1.6 at. %), none of the peaks appear attributable to previously reported interstitial C levels. Possible sources for these levels are discussed

Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions

Realization of group IV heterostructure devices requires the accurate measurement of the energy band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions. Using admittance spectroscopy, we have measured valence-band offsets in Si/Si1–xGex heterostructures and conduction-band and valence-band offsets in Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Measured Si/Si1–xGex valence-band offsets were in excellent agreement with previously reported values. For Si/Si1–x–yGexCy our measurements yielded a conduction-band offset of 100 ± 11 meV for a n-type Si/Si0.82Ge0.169C0.011 heterojunction and valence-band offsets of 118 ± 12 meV for a p-type Si/Si0.79Ge0.206C0.004 heterojunction and 223 ± 20 meV for a p-type Si/Si0.595Ge0.394C0.011 heterojunction. Comparison of our measured band offsets with previously reported measurements of energy band gaps in Si1–x–yGexCy and Si1–yCy alloy layers indicates that the band alignment is type I for the compositions we have studied and that our measured band offsets are in quantitative agreement with these previously reported results

Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures

Deep-level transient spectroscopy was used to measure the activation energies of deep levels in n-type Si/Si1–x–yGexCy heterostructures grown by solid-source molecular-beam epitaxy. Four deep levels have been observed at various activation energies ranging from 231 to 405 meV below the conduction band. The largest deep-level concentration observed was in the deepest level and was found to be approximately 2 × 10^15 cm^–3. Although a large amount of nonsubstitutional C was present in the alloy layers (1–2 at. %), no deep levels were observed at any energy levels that, to the best of our knowledge, have been previously attributed to interstitial C

Initial results from the Caltech/DRSI balloon-borne isotope experiment

The Caltech/DSRI balloonborne High Energy Isotope Spectrometer Telescope (HEIST) was flown successfully from Palestine, Texas on 14 May, 1984. The experiment was designed to measure cosmic ray isotopic abundances from neon through iron, with incident particle energies from approx. 1.5 to 2.2 GeV/nucleon depending on the element. During approximately 38 hours at float altitude, 100,000 events were recorded with Z or = 6 and incident energies approx. 1.5 GeV/nucleon. We present results from the ongoing data analysis associated with both the preflight Bevalac calibration and the flight data

Contribution of Scalar Loops to the Three-Photon Decay of the Z

I corrected 3 mistakes from the first version: that were an omitted Feynman integration in the function f^3_{ij}, a factor of 2 in front of log f^3_{ij} in eq.2 and an overall factor of 2 in Fig.1 c). The final result is changed drastically. Doing an expansion in the Higgs mass I show that the matrix element is identically 0 in the order (MZ/MH)^2, which is due to gauge invariance. Left with an amplitude of the order (MZ/MH)^4 the final result is that the scalar contribution to this decay rate is several orders of magnitude smaller than those of the W boson and fermions.Comment: 6 pages, plain Tex, 1 figure available under request via fax or mail, OCIP/C-93-5, UQAM-PHE-93/0

Stabilizing the surface morphology of Si1–x–yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source

Si1–x–yGexCy/Si superlattices were grown by solid-source molecular beam epitaxy using silicon carbide as a source of C. Samples consisting of alternating layers of nominally 25 nm Si1–x–yGexCy and 35 nm Si for 10 periods were characterized by high-resolution x-ray diffraction, transmission electron microscopy (TEM), and Rutherford backscattering spectrometry to determine strain, thickness, and composition. C resonance backscattering and secondary ion mass spectrometries were used to measure the total C concentration in the Si1–x–yGexCy layers, allowing for an accurate determination of the substitutional C fraction to be made as a function of growth rate for fixed Ge and substitutional C compositions. For C concentrations close to 1%, high-quality layers were obtained without the use of Sb-surfactant mediation. These samples were found to be structurally perfect to a level consistent with cross-sectional TEM (< 10^7 defects/cm^2) and showed considerably improved homogeneity as compared with similar structures grown using graphite as the source for C. For higher Ge and C concentrations, Sb-surfactant mediation was found to be required to stabilize the surface morphology. The maximum value of substitutional C concentration, above which excessive generation of stacking fault defects caused polycrystalline and/or amorphous growth, was found to be approximately 2.4% in samples containing between 25 and 30% Ge. The fraction of substitutional C was found to decrease from roughly 60% by a factor of 0.86 as the Si1–x–yGexCy growth rate increased from 0.1 to 1.0 nm/s

Calorons and BPS monopoles with non-trivial holonomy in the confinement phase of SU(2) gluodynamics

With the help of the cooling method applied to SU(2) lattice gauge theory at non-zero $T \le T_c$ we present numerical evidence for the existence of superpositions of Kraan-van Baal caloron (or BPS monopole pair) solutions with non-trivial holonomy, which might constitute an important contribution to the semi-classical approximation of the partition function.Comment: 3 pages, 6 figures, contribution to Lattice2002(topology

On Dirac sheet configurations of SU(2) lattice fields

Finite temperature Euclidean SU(2) lattice gauge fields close to the deconfinement phase transition are subjected to cooling. We find relatively stable or absolutely stable configurations with an action below the one-instanton action $S_{inst}=2\pi^2$ both in the deconfinement and the confinement phases. In this paper we attempt an interpretation of these lowest action configurations. Their action is purely magnetic and amounts to $S/S_{inst} \approx N_t/N_s$, where $N_t$ ($N_s$) is the timelike (spacelike) lattice size, while the topological charge vanishes. In the confined phase part of the corresponding lattice configurations turns out to be absolutely stable with respect to the cooling process in which case Abelian projection reveals a homogeneous, purely Abelian magnetic field closed over the "boundary" in one of the spatial directions. Referring to the dyonic structure established for the confinement phase near $T_c$ and based on the observation made for this phase that such events below the instanton action $S_{inst}$ emerge from dyon-antidyon annihilation, the question of stability (metastability) is discussed for both phases. The hypothetically different dyonic structure of the deconfinement phase, inaccessible by cooling, could explain the metastability.Comment: 14 pages, 7 figure