Cyclotron motion and magnetic focusing in semiconductor quantum wells with spin-orbit coupling

We investigate the ballistic motion of electrons in III-V semiconductor quantum wells with Rashba spin-orbit coupling in a perpendicular magnetic field. Taking into account the full quantum dynamics of the problem, we explore the modifications of classical cyclotron orbits due to spin-orbit interaction. As a result, for electron energies comparable with the cyclotron energy the dynamics are particularly rich and not adequately described by semiclassical approximations. Our study is complementary to previous semiclassical approaches concentrating on the regime of weaker fields.Comment: 14 pages, 8 figures included, version to appear in Phys. Rev.

Thin-film quantum dot photodiode for monolithic infrared image sensors

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III-V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10(-6) A/cm(2) at 2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors

Atomic layer deposition of titanium nitride for quantum circuits

Superconducting thin films with high intrinsic kinetic inductance are of great importance for photon detectors, achieving strong coupling in hybrid systems, and protected qubits. We report on the performance of titanium nitride resonators, patterned on thin films (9-110 nm) grown by atomic layer deposition, with sheet inductances of up to 234 pH/square. For films thicker than 14 nm, quality factors measured in the quantum regime range from 0.4 to 1.0 million and are likely limited by dielectric two-level systems. Additionally, we show characteristic impedances up to 28 kOhm, with no significant degradation of the internal quality factor as the impedance increases. These high impedances correspond to an increased single photon coupling strength of 24 times compared to a 50 Ohm resonator, transformative for hybrid quantum systems and quantum sensing.Comment: 10 pages, 8 figures including supplemental material

Giant Magnetothermal Conductivity Switching in Semimetallic WSi2_{2} Single Crystals

Materials able to rapidly switch between thermally conductive states by external stimuli such as electric or magnetic fields can be used as all-solid-state thermal switches and open a myriad of applications in heat management, power generation and cooling. Here, we show that the large magnetoresistance that occurs in the highly conducting semimetal $\alpha$-WSi$_{2}$ single crystals leads to dramatically large changes in thermal conductivity at temperatures <100 K. At temperatures <20 K, where electron-phonon scattering is minimized, the thermal conductivity switching ratio between zero field and a 9T applied field can be >7. We extract the electronic and lattice components of the from the thermal conductivity measurements and show that the Lorenz number for this material approximates the theoretical value of L$_{0}$. From the heat capacity and thermal diffusivity, the speed of thermal conductivity switching is estimated to range from 1 x 10$^{-4}$ seconds at 5 K to 0.2 seconds at 100 K for a 5-mm long sample. This work shows that WSi$_{2}$, a highly conducting multi-carrier semimetal, is a promising thermal switch component for low-temperature applications such cyclical adiabatic demagnetization cooling, a technique that would enable replacing $^{3}$He-based refrigerators.Comment: 20 pages, 6 figure

Photoluminescence spectra of point defects in semiconductors: validation of first principles calculations

Optically and magnetically active point defects in semiconductors are interesting platforms for the development of solid-state quantum technologies. Their optical properties are usually probed by measuring photoluminescence spectra, which provide information on excitation energies and on the interaction of electrons with lattice vibrations. We present a combined computational and experimental study of photoluminescence spectra of defects in diamond and SiC, aimed at assessing the validity of theoretical and numerical approximations used in first principles calculations, including the use of the Franck-Condon principle and the displaced harmonic oscillator approximation. We focus on prototypical examples of solid-state qubits, the divacancy centers in SiC and the nitrogen-vacancy in diamond, and we report computed photoluminescence spectra as a function of temperature that are in very good agreement with the measured ones. As expected we find that the use of hybrid functionals leads to more accurate results than semilocal functionals. Interestingly our calculations show that constrained density functional theory (CDFT) and time-dependent hybrid DFT perform equally well in describing the excited state potential energy surface of triplet states; our findings indicate that CDFT, a relatively cheap computational approach, is sufficiently accurate for the calculations of photoluminescence spectra of the defects studied here. Finally, we find that only by correcting for finite-size effects and extrapolating to the dilute limit, one can obtain a good agreement between theory and experiment. Our results provide a detailed validation protocol of first principles calculations of photoluminescence spectra, necessary both for the interpretation of experiments and for robust predictions of the electronic properties of point defects in semiconductors

In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems

Using a novel technique, we make quantitative measurements of the spin polarization of dilute (3.4 to 6.8*10^{10} cm^{-2}) GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating \textit{before} it is fully spin polarized. The minority-spin population at the transition is ~8*10^{9} cm^{-2}, close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field.Comment: 4 pages with figure