154 research outputs found
Pauli Spin Blockade of Heavy Holes in a Silicon Double Quantum Dot
In this work, we study hole transport in a planar silicon
metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin
blockade in the few hole regime and map the spin relaxation induced leakage
current as a function of inter-dot level spacing and magnetic field. With
varied inter-dot tunnel coupling we can identify different dominant spin
relaxation mechanisms. Applying a strong out-of-plane magnetic field causes an
avoided singlet-triplet level crossing, from which the heavy hole g-factor
0.93, and the strength of spin-orbit interaction 110 eV, can
be obtained. The demonstrated strong spin-orbit interaction of heavy hole
promises fast local spin manipulation using only electrical fields, which is of
great interest for quantum information processing.Comment: 15 pages, 4 figure
Silicon CMOS architecture for a spin-based quantum computer
Recent advances in quantum error correction (QEC) codes for fault-tolerant
quantum computing \cite{Terhal2015} and physical realizations of high-fidelity
qubits in a broad range of platforms \cite{Kok2007, Brown2011, Barends2014,
Waldherr2014, Dolde2014, Muhonen2014, Veldhorst2014} give promise for the
construction of a quantum computer based on millions of interacting qubits.
However, the classical-quantum interface remains a nascent field of
exploration. Here, we propose an architecture for a silicon-based quantum
computer processor based entirely on complementary metal-oxide-semiconductor
(CMOS) technology, which is the basis for all modern processor chips. We show
how a transistor-based control circuit together with charge-storage electrodes
can be used to operate a dense and scalable two-dimensional qubit system. The
qubits are defined by the spin states of a single electron confined in a
quantum dot, coupled via exchange interactions, controlled using a microwave
cavity, and measured via gate-based dispersive readout \cite{Colless2013}. This
system, based entirely on available technology and existing components, is
compatible with general surface code quantum error correction
\cite{Terhal2015}, enabling large-scale universal quantum computation
Cotunneling thermopower of single electron transistors
We study the thermopower of a quantum dot weakly coupled to two reservoirs by
tunnel junctions. At low temperatures the transport through the dot is
suppressed by charging effects (Coulomb blockade). As a result the thermopower
shows an oscillatory dependence on the gate voltage. We study this dependence
in the limit of low temperatures where the transport through the dot is
dominated by the processes of inelastic cotunneling. We also obtain a crossover
formula for intermediate temperatures which connects our cotunneling results to
the known sawtooth behavior in the sequential tunneling regime. As the
temperature is lowered, the amplitude of thermopower oscillations increases,
and their shape changes qualitatively.Comment: 9 pages, including 4 figure
Orbital and valley state spectra of a few-electron silicon quantum dot
Understanding interactions between orbital and valley quantum states in
silicon nanodevices is crucial in assessing the prospects of spin-based qubits.
We study the energy spectra of a few-electron silicon metal-oxide-semiconductor
quantum dot using dynamic charge sensing and pulsed-voltage spectroscopy. The
occupancy of the quantum dot is probed down to the single-electron level using
a nearby single-electron transistor as a charge sensor. The energy of the first
orbital excited state is found to decrease rapidly as the electron occupancy
increases from N=1 to 4. By monitoring the sequential spin filling of the dot
we extract a valley splitting of ~230 {\mu}eV, irrespective of electron number.
This indicates that favorable conditions for qubit operation are in place in
the few-electron regime.Comment: 4 figure
Observation of the single-electron regime in a highly tunable silicon quantum dot
We report on low-temperature electronic transport measurements of a silicon
metal-oxide-semiconductor quantum dot, with independent gate control of
electron densities in the leads and the quantum dot island. This architecture
allows the dot energy levels to be probed without affecting the electron
density in the leads, and vice versa. Appropriate gate biasing enables the dot
occupancy to be reduced to the single-electron level, as evidenced by
magnetospectroscopy measurements of the ground state of the first two charge
transitions. Independent gate control of the electron reservoirs also enables
discrimination between excited states of the dot and density of states
modulations in the leads.Comment: 4 pages, 3 figures, accepted for Applied Physics Letter
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