Sobre la validez del modelo difusional en la determinación de los parámetros de transporte eléctrico de compuestos semiconductores

In this work we have studied the variable range hopping as a predominant electronic transport mechanism for semiconductor materials used as absorbent layer in photovoltaic devices. Dark conductivity measurements were carried out from 120 to 420 K in Si, Cu3BiS3, SnS, Cu2ZnSnSe4, and CuInGaSe2 thin lms. In the low-temperature range, variational range hopping was established for all samples. Using classical equations from the percolation theory and the difusional model, the density of states near the Fermi level (NF), as well as the hopping parameters (W-activation energy and R hopping range) were calculated. A correlation between both models allowed us to evaluate the validity of the difusional model in semiconductor compounds

Structural and optical properties of compensated microcrystalline silicon films

Boron-doped microcrystalline silicon films were deposited in a plasma enhanced chemical vapor deposition (PECVD) system using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant gas. The effects of the Boron concentration on the optical and structural properties were investigated by the constant-photocurrent method (CPM) and atomic force microscopy (AFM) measurements. The variations in the optical constants (refractive index, absorption coefficient and optical gap) as a function of wavelength were carried out from the optical transmission and CPM spectra. By increasing the doping level, a systematic increase in the absorption coefficient spectra in the low-energy region between 0.7 - 1.2 eV was observed. It was found that the increase of Boron concentration in the samples results in changes of the grain size. Correlations between optical properties and the density of states (DOS) were also studied.Fil: Dussan, A.. Universidad Nacional de Colombia; ColombiaFil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Arce, Roberto Delio. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; Argentin

A note about isothermic surfaces in Rn−j,j

In this note we survey our results on the description of ti-melike isothermic surfaces in Rn-j,j using the Grassmannian systems or U/K-systems. We give the natural extensions of the definition of Ribaucour and Darboux transformations for timelike isothermic surfaces and review how those transformations correspond to dressing actions of suitable simple elements.      &nbsp

Cálculo de constantes ópticas de películas delgadas de Cu3BiS3 a través del método de Wolfe

Se calculó la obtención de las constantes ópticas usando el método de Wolfe. Dichas contantes: coeficiente de absorción (α), índice de refracción (n) y espesor de una película delgada (d ), son de importancia en el proceso de caracterización óptica del material. Se realizó una comparación del método del Wolfe con el método empleado por R. Swanepoel. Se desarrolló un modelo de programación no lineal con restricciones, de manera que fue posible estimar las constantes ópticas de películas delgadas semiconductoras, a partir únicamente, de datos de transmisión conocidos. Se presentó una solución al modelo de programación no lineal para programación cuadrática. Se demostró la confiabilidad del método propuesto, obteniendo valores de α = 10378.34 cm−1, n = 2.4595, d =989.71 nm y Eg = 1.39 Ev, a través de experimentos numéricos con datos de medidas de transmitancia espectral en películas delgadas de Cu3BiS3.Using the Wolfe method, we calculated the procurement of optical constants. These constants, absorption coefficient (α), refraction index of (n) and thin film thickness (d ), are significant in the optical characterization of the material. We compared the Wolfe method with the method employed by R. Swanepoel. To estimate theoptical constants of semiconductor thin films, we developed a constrained nonlinear programming model, based solely, on known transmission data. Ultimately, we presented a solution to this nonlinear programming model for quadratic programming. Through numerical experiments and transmittance spectral data of Cu3BiS3 thin films, we obtained values of a= 10378.34 cm−1, n = 2.4595, d =989.71 nm and Eg= 1.39 Ev, demonstrating the reliability of the proposed method

Geodesic Lines in Fields of Velocity

This work is a purely syntactic geometric exploration of some few elements, which are our axioms, that in last instance it is the set of differential equations whose solutions give the geodesic lines of the Schwarzschild spacetime. We observe that non new physics principles or postulates will be introduced in this work. We only link the Bohr's atoms model with the Einstein's relativity through of a common geometric syntax. To obtain this common syntax, we will define the {\it extended Lorentz group}, which is defined to preserve the volume form of the Minkowski spacetime. The Schwarzschild spacetime will be defined as a manifold associated to a set of radial fields of velocities within of the four-dimensional Minkowski vectorially space form. Our procedure includes a comparison of the Newtonian and the Schwarzschild times along geodesic lines. Our constructions have strong influence of the Einstein paper about the energy content produced by fields, as well as by the Schr\"odinger digression about the annihilation of matter. We define the orbital associated to the Kepler's laws as a set of elliptical orbits, which have equal eccentricity and equal major semi-axis. Then identifying the eccentricity with the relativistic velocity we will obtain a thermodynamic equivalence between the increasing of mass in kinetic form in special relativity theory and an adiabatic process with degree of freedom equal to 2. The eccentricity will be the needed velocity to move the revolution ellipsoid and so to obtain a contraction of its major axis such that it converts into a sphere with radius given by the minor semi-axis. Therefore we can associate to the each class of equal eccentricity orbital an unique timelike unit vector, which is called {\it the observer} of class.Comment: 39 page

Density of States in Thin Boron-Doped Microcrystalline Silicon Films Estimated from the Thermally Stimulated Conductivity Method

In this work, a series of boron-doped microcrystalline silicon samples [μc-Si:H(B)] were deposited by plasma-enhanced chemical vapor deposition, using silane (SiH4) diluted in hydrogen, and diborane (B2H6) as a dopant gas. The concentration of B2H6 in SiH4 was varied in the range of 0-100 ppm. The density of states was obtained from the thermally stimulated conductivity technique and compared with results obtained by the modulated photoconductivity methods. To explain the poor agreement between the density of states obtained from the thermally stimulated conductivity and the other methods, it is shown by means of numerical simulations that the density of states is very sensitive to experimental errors introduced in the calculation of the μn τn product (mobility of electron × lifetime of the electron). The thermally stimulated conductivity method is applied here for the first time to calculate the density of defect states in the forbidden band of μc-Si:H samples.Fil: Dussan, A.. Universidad Nacional de Colombia. Departamento de Física; ColombiaFil: Schmidt, Javier Alejandro. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Física del Litoral; ArgentinaFil: Koropecki, Roberto Roman. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química (i); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Física del Litoral; Argentin

Structural study of semiconductors for photovoltaic applications

Se presenta un estudio de las propiedades estructurales de los semiconductores Bi2S3, SnS, SnS2, SnS:Bi, Cu3BiS3 y Cu(In,Ga)Se2 (CIGS) usados como capa absorbente en dispositivos optoelectrónicos. Todas las muestras fueron crecidas por procesos de co-evaporación de sus especies metálicas sobre sustratos de vidrio. El efecto de las condiciones de preparación sobre las propiedades estructurales y composición química han sido analizados y obtenidos a partir de difracción de rayos-X (XRD) y espectroscopia de electrones Auger (AES). Los resultados revelan que todos los compuestos crecen con estructura ortorrómbica, a diferencia del SnS2 y el CIGS, que crecen con estructura hexagonal y tetragonal, respectivamente. Los resultados composicionales revelaron que a partir de la deconvolución de sus picos se encontraron fases asociadas a Cu2Se y In2Se3We present a study of the structural properties of Bi2S3, SnS, SnS2, SnS:Bi, Cu3BiS3 and Cu(In,Ga)Se2 (CIGS) semiconductor compounds used as absorber layer in optoelectronic devices. The samples were grown by co-evaporation processes of the metallic species on glass substrates. The effect of preparation conditions on the structural properties and chemical composition has been analyzed and made from X-ray diffraction (XRD) and Auger electron spectroscopy (AES) measurements. The results show that all compounds grow with orthorhombic structure, unlike the SnS2 and CIGS growing hexagonal and tetragonal structure, respectively. The compositional results showed that after the deconvolution of peaks associated phases Cu2Se and In2Se3 were found