Segregation of in to dislocations in InGaN

Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa1-xN alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films

Disruption of Yarrowia lipolytica biofilms by rhamnolipid biosurfactant

BACKGROUND: Yarrowia lipolytica is an ascomycetous dimorphic fungus that exhibits biofilm mode of growth. Earlier work has shown that biosurfactants such as rhamnolipids are efficient dispersants of bacterial biofilms. However, their effectiveness against fungal biofilms (particularly Y. lipolytica) has not been investigated. The aim of this study was to determine the effect of rhamnolipid on a biofilm forming strain of Y. lipolytica. Two chemical surfactants, cetyl-trimethyl ammonium bromide (CTAB) and sodium dodecyl sulphate (SDS) were used as controls for comparison. RESULTS: The methylene blue dye exclusion assay indicated an increase in fungal cell permeability after rhamnolipid treatment. Microtiter plate assay showed that the surfactant coating decreased Y. lipolytica biofilm formation by 50%. Rhamnolipid treatment disrupted pre-formed biofilms in a more effective manner than the other two surfactants. Confocal laser scanning microscopic studies showed that biofilm formation onto glass surfaces was decreased by 67% after sub-minimum inhibitory concentration (sub-MIC) treatment with rhamnolipids. The disruption of biofilms after rhamnolipid treatment was significant (P<0.05) when compared to SDS and CTAB. CONCLUSION: The results indicate a potential application of the biological surfactant to disrupt Y. lipolytica biofilms

Dislocation core structures in Si-doped GaN

Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaN films with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 108 and (10 ± 1) × 109 cm−2. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.This work was funded in part by the Cambridge Commonwealth trust, St. John's College, British Federation of Women Graduates and the EPSRC. M.A.M. acknowledges the support from the Royal Society through a University Research Fellowship. Additional support was provided by the EPSRC through the UK National Facility for Aberration-Corrected STEM (SuperSTEM).This is the author accepted manuscript. The final version is available from AIP via http://dx.doi.org/10.1063/1.493745

Segregation of In to dislocations in InGaN.

Dislocations are one-dimensional topological defects that occur frequently in functional thin film materials and that are known to degrade the performance of InxGa1-xN-based optoelectronic devices. Here, we show that large local deviations in alloy composition and atomic structure are expected to occur in and around dislocation cores in InxGa(1-x)N alloy thin films. We present energy-dispersive X-ray spectroscopy data supporting this result. The methods presented here are also widely applicable for predicting composition fluctuations associated with strain fields in other inorganic functional material thin films.This work was funded in part by the Cambridge Commonwealth trust, St. John’s College and the EPSRC. SKR is funded through the Cambridge-India Partnership Fund and Indian Institute of Technology Bombay via a scholarship. MAM acknowledges support from the Royal Society through a University Research Fellowship. Additional support was provided by the EPSRC through the UK National Facility for Aberration-Corrected STEM (SuperSTEM). The Titan 80- 200kV ChemiSTEMTM was funded through HM Government (UK) and is associated with the capabilities of the University of Manchester Nuclear Manufacturing (NUMAN) capabilities. SJH acknowledges funding from the Defence Treat Reduction Agency (DTRA) USA (grant number HDTRA1-12-1-0013).This is the accepted manuscript. The final version is available at http://pubs.acs.org/doi/abs/10.1021/nl5036513

AMPS-1D simulation studies of electronic transport in n(+)-mu c-Si : H thin films

To study the electronic transport in highly n-doped microcrystalline silicon (n(+)-mu c-Si:H) thin films, grain-boundary trapping model is implemented in AMPS (analysis of microelectronic and photonic structure)-1D. This approach is based on the traditional thermionic-emission model and considering the electronic transport parallel to the substrate. In spite of its simplicity, the model leads to the simulated values of activation energy, free carrier concentration, interface trap charge density and mobility which are in good agreement with the referred Hall effect measurement results for electron cyclotron resonance-chemical vapor deposited (ECR-CVD) highly n-doped mu c-Si:H thin films. (c) 2006 Elsevier B.V. All rights reserved

From a-C to nanographene by chemical nano-engineering

Interaction of atomic hydrogen with amorphous carbon (a-C) grown on Cu substrate has been explored for the first time. Here we report the investigations performed at 600 degrees C substrate temperature. This research finds its significance in understanding the role of atomic hydrogen in establishing the growth of graphene at low substrate temperatures. After exposing the a-C film to atomic hydrogen for various durations, we observe that atomic hydrogen reacts with the a-C film on Cu surface leading to the formation of nanographene. With the increase in exposure time, graphene nuclei grow in number and dimension, forming a polycrystalline network of nanographene domains. High resolution transmission electron microscope images reveal this structural transformation, which has also been substantiated by Raman spectra. The chemical compositional analysis is performed using X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. Based on these observations, we explain the probable mechanism which elucidates the role of atomic hydrogen in transforming a-C into sp(2) hybridized hexagonal structures in the presence of Cu at 600 degrees C. (C) 2018 Elsevier B.V. All rights reserved

Effect of local structural order on the doping in hydrogenated amorphous silicon (a-Si:H)

Doping in a-Si:H has been studied in the light of local structural order present in these films and the consequent modification in this upon dopant incorporation. It is seen that the local structural order is a very important parameter to understand the doping mechanism and variation in this conelates well with the variation in doping efficiency with increasing dopant concentration and the increase in the defect density. Interesting results on the compensated samples are also reported and discussed

Aluminum-induced in situ crystallization of HWCVD a-Si : H films

Aluminum-induced in situ crystallization (AIC) of amorphous silicon films deposited by hot wire chemical vapor deposition (HWCVD) on glass is demonstrated. Aluminum was deposited at temperatures varying from room temperature to 300 degrees C on HWCVD a-Si:H films. The AIC was observed to take place in situ during the deposition of Al films, when the glass/a-Si:H temperature is kept 300 degrees C. A 20-nm Al film was effective in inducing crystallization of about 63% in the a-Si:H film. Thus, separate post-deposition annealing step can be avoided. For an Al film thickness comparable to the amorphous silicon film deposited at an optimum deposition rate, crystallization at temperature as low as 200 degrees C is observed. It was also observed that the growth pattern of c-Si in case of AIC without post-deposition annealing was identical to AIC with annealing step. (c) 2007 Elsevier B.V. All rights reserved