Variation of Electrostatic Coupling and Investigation of Current Percolation Paths in Nanocrystalline Silicon Cross Transistors

Nanocrystalline silicon thin films are promising materials for the development of advanced Large Scale Integration compatible quantum-dot and single-electron charging devices. The films consist of nanometer-scale grains of crystalline silicon, separated by amorphous silicon or silicon dioxide grain boundaries up to a few nanometer thick. These films have been used to fabricate single-electron transistor and memory devices, where the grains form single-electron charging islands isolated by tunnel barriers formed by the grain boundaries. The grain boundary tunnel barrier isolating the grains is also of great importance, as this determines the extent of the electrostatic and tunnel coupling between different grains. These effects can lead to the nanocrystalline silicon thin film behaving as a system of coupled quantum dots.& more..

Seebeck coefficient of one electron

The Seebeck coefficient of one electron, driven thermally into a semiconductor single-electron box, is investigated theoretically. With a finite temperature difference ΔT between the source and charging island, a single electron can charge the island in equilibrium, directly generating a Seebeck effect. Seebeck coefficients for small and finite ΔT are calculated and a thermally driven Coulomb staircase is predicted. Single-electron Seebeck oscillations occur with increasing ΔT, as one electron at a time charges the box. A method is proposed for experimental verification of these effects