2 research outputs found

    Light-induced mass transport in amorphous chalcogenides/gold nanoparticles composites

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    We have established that mass-transport processes in two types of amorphous materials, based on light-sensitive inorganic compounds like Se and As₂₀Se₈₀ chalcogenide glasses (ChG), can be enhanced at the nanoscale in the presence of localized plasmonic fields generated by visible light in gold nanoparticles (GNPs), if the condition of surface plasmon resonance (SPR) is fulfilled. It was found that irradiation by light in the presence of SPR produces profound surface nanostructurizations, and variation in topography follows closely and permanently the underlying near field intensity pattern. We have proposed a model of mass-transport in which the existence of moving anisotropic dipolar units and internal electric field in ChG as a main driving force of this movement is suggested

    The influence of mercury vapor on the electrical resistance of chalcogenide amorphous films

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    Using the planar structures "Ni layer - chalcogenide amorphous film - Ni layer" and "graphite probe - chalcogenide amorphous film graphite probe" samples, the influence of mercury vapor on the electrical resistance of amorphous films of the Se-Te, Se-Sb and Se-As systems was investigated. It was established that exposure of samples in mercury vapor leads to a decrease in their electrical resistance by 4-7 orders of magnitude. As the temperature and mercury concentration increase, the transition time from a high-resistance state to a low-resistance state decreases. When introducing Te, Sb, and As into amorphous selenium and increasing their concentration in the composition of the films, the transition time increases, and the value of the change in resistance decreases. It was established that the change in resistance is mainly determined by the change in surface conductivity of chalcogenide films. A decrease in the electrical resistance of selenium-containing amorphous films modified with mercury is caused by the formation of HgSe crystalline inclusions in their matrix
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