339 research outputs found

    Temperature dependence of the ohmic conductivity and activation energy of Pb1+y(Zr0.3Ti0.7)O3 thin films

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    The ohmic conductivity of the sol-gel derived Pb1+y(Zr0.3Ti0.7)O3 thin films (with the excess lead y=0.0 to 0.4) are investigated using low frequency small signal alternate current (AC) and direct current (DC) methods. Its temperature dependence shows two activation energies of 0.26 and 0.12 eV depending on temperature range and excess Pb levels. The former is associated with Pb3+ acceptor centers, while the latter could be due to a different defect level yet to be identified.Comment: 13 pages, 3 figures, PostScript. Submitted to Applied Physics Letter

    Noise spectroscopy and interlayer phase-coherence in bilayer quantum Hall systems

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    Bilayer quantum Hall systems develop strong interlayer phase-coherence when the distance between layers is comparable to the typical distance between electrons within a layer. The phase-coherent state has until now been investigated primarily via transport measurements. We argue here that interlayer current and charge-imbalance noise studies in these systems will be able to address some of the key experimental questions. We show that the characteristic frequency of current-noise is that of the zero wavevector collective mode, which is sensitive to the degree of order in the system. Local electric potential noise measured in a plane above the bilayer system on the other hand is sensitive to finite-wavevector collective modes and hence to the soft-magnetoroton picture of the order-disorder phase transition.Comment: 5 pages, 2 figure

    Electronic spin precession in semiconductor quantum dots with spin-orbit coupling

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    The electronic spin precession in semiconductor dots is strongly affected by the spin-orbit coupling. We present a theory of the electronic spin resonance at low magnetic fields that predicts a strong dependence on the dot occupation, the magnetic field and the spin-orbit coupling strength. Coulomb interaction effects are also taken into account in a numerical approach.Comment: 5 pages, 4 figure

    Joule-assisted silicidation for short-channel silicon nanowire devices

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    We report on a technique enabling electrical control of the contact silicidation process in silicon nanowire devices. Undoped silicon nanowires were contacted by pairs of nickel electrodes and each contact was selectively silicided by means of the Joule effect. By a realtime monitoring of the nanowire electrical resistance during the contact silicidation process we were able to fabricate nickel-silicide/silicon/nickel- silicide devices with controlled silicon channel length down to 8 nm.Comment: 6 pages, 4 figure
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