Cr-based MOCVD layers as conducting diffusion barriers for copper metallization

Two types of amorphous Cr-based thin films, CrCxNy and CrSixCy, were grown by low pressure MOCVD on Si substrates using respectively Cr(NEt2)4 and Cr[CH2SiMe3]4 as single-source precursor in the low temperature range 400-420 °C and 475-500 °C. Their properties as conducting diffusion barrier against Cu were investigated and the results are discussed. CrSixCy exhibits a better thermal stability and a good Cu wettability but a high resistivity, which is detrimental for this application. CrCxNy has a low resistivity, a satisfactory stability up to 650 °C without undesirable interfacial reactions and an excellent conformality.Two types of amorphous Cr-based thin films, CrCxNy and CrSixCy, were grown by low pressure MOCVD on Si substrates using respectively Cr(NEt2)4 and Cr[CH2SiMe3]4 as single-source precursor in the low temperature range 400-420 °C and 475-500 °C. Their properties as conducting diffusion barrier against Cu were investigated and the results are discussed. CrSixCy exhibits a better thermal stability and a good Cu wettability but a high resistivity, which is detrimental for this application. CrCxNy has a low resistivity, a satisfactory stability up to 650 °C without undesirable interfacial reactions and an excellent conformality

Study of the treatment's homogeneity in plasma assisted chemical vapour deposition by atmospheric pressure dielectric barrier discharge

Proceedings of the 35th International Conference on Metallurgical Coatings and Thin Films - 35th International Conference on Metallurgical Coatings and Thin FilmsInternational audienceDielectric Barrier Discharge (DBD) appears to be a promising technology to perform surface treatments at atmospheric pressure, particularly for the treatments of large-dimension flat objects for on-line industrial applications. Besides the fact of allowing short treatment times, the advantage of atmospheric pressure is the suppression of constraints correlated to the implementation of vacuum devices necessary for low pressure treatments. But at the present time, if this technology showed its ability for the surface cleaning, it is not still the case for thin film deposition over large surfaces, due to an insufficient homogeneity of the deposited layers. This lack of homogeneity is the main present problem limiting the use of DBD in PACVD. The study of the layer's uniformity leads us to search links between the internal physical phenomena inside the reactor and the layer's properties. This paper is focused to the study of the spatial homogeneity of SiOx thin films deposited over large surfaces by using an atmospheric pressure DBD with N2/O2/HMDSO gas mixture. The results presented in this paper show that it is possible to understand the homogeneity variations of deposited layers by simultaneously making the link between the deposited power in plasma (taking into account both the energy per pulse and the pulse repetition frequency) and the gas hydrodynamics in the flow boundary laye