Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks

GeSn alloys with Sn contents of 8.4 % and 10.7 % are grown pseudomorphically on Ge buffers on Si (001) substrates. The alloys as-grown are compressively strained, and therefore indirect bandgap. Undercut GeSn on Ge microdisk structures are fabricated and strained by silicon nitride stressor layers, which leads to tensile strain in the alloys, and direct bandgap photoluminescence in the 3–5 µm gas sensing window of the electromagnetic spectrum. The use of pseudomorphic layers and external stress mitigates the need for plastic deformation to obtain direct bandgap alloys. It is demonstrated, that the optically pumped light emission overlaps with the methane absorption lines, suggesting that GeSn alloys are well suited for mid-infrared integrated gas sensors on Si chips

Tensile Strained GeSn Mid-Infrared Light Emitters

Compressively strained GeSn alloys grown on Ge buffers on Si (001) substrates were fabricated into microdisks and strained using silicon nitride stressors. The strained disks are measured to be tensile by Raman spectroscopy, and demonstrate direct bandgap emission in the 3-5 μm gas sensing window

Ge/SiGe quantum confined Stark effect modulators with low voltage swing at lambda = 1550 nm

Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulators covering 1460 to 1560 nm wavelength have been demonstrated using Ge/SiGe quantum confined Stark effect diodes grown on a silicon substrate

Nigeria Free the 'Ogoni 20'

SIGLEAvailable from British Library Document Supply Centre-DSC:3102.735(51) / BLDSC - British Library Document Supply CentreGBUnited Kingdo

High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2×10−16WHz−12 noise equivalent power

A Review of Ge-on-Si Single Photon Avalanche Diode (SPAD) Photodetectors and Applications

No abstract available

Surface-normal illuminated pseudo-planar Ge-on-Si avalanche photodiodes with high gain and low noise

Germanium-on-Silicon (Ge-on-Si) avalanche photodiodes (APDs) are of considerable interest as low intensity light detectors for emerging applications. The Ge absorption layer detects light at wavelengths up to ≈ 1600 nm with the Si acting as an avalanche medium, providing high gain with low excess avalanche noise. Such APDs are typically used in waveguide configurations as growing a sufficiently thick Ge absorbing layer is challenging. Here, we report on a new vertically illuminated pseudo-planar Ge-on-Si APD design utilizing a 2 µm thick Ge absorber and a 1.4 µm thick Si multiplication region. At a wavelength of 1550 nm, 50 µm diameter devices show a responsivity of 0.41 A/W at unity gain, a maximum avalanche gain of 101 and an excess noise factor of 3.1 at a gain of 20. This excess noise factor represents a record low noise for all configurations of Ge-on-Si APDs. These APDs can be inexpensively manufactured and have potential integration in silicon photonic platforms allowing use in a variety of applications requiring high-sensitivity detectors at wavelengths around 1550 nm