11 research outputs found

    Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy

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    The relaxation dynamics of the carriers through the defect levels in an epitaxial GaN film grown with an AlN buffer layer on Si has been performed on the femto-picosecond timescale, using ultrafast transient absorption spectroscopy (UFTS). The sample was pumped above and below the band gap and probed with a white light continuum (480-800 nm). A combination of bi and triple exponential decay functions at different probe wavelengths were used to fit the kinetic profile of the carriers in the defect continuum. Based on the UFTS measurements, a model is proposed which explains the dynamics in the shallow traps and deep level defects. Furthermore, to determine the role of the lattice in the relaxation dynamics, the experiment was conducted at a low lattice temperature of 4.2 K. The relaxation constants from the UFTS measurements confirm not only the presence of shallow and deep level defects but also the involvement of phonons in one of the relaxation processes

    Probing the correlation between structure, carrier dynamics and defect states of epitaxial GaN film on (11(2)over-bar0) sapphire grown by rf-molecular beam epitaxy

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    A systematic study has been performed to correlate structural, optical and electrical properties with defect states in the GaN films grown on a-plane (11 (2) over bar0) sapphire substrate via rf-plasma molecular beam epitaxy. Morphological analysis reveals the presence of small lateral size (30-70 nm) hexagonally shaped V-pits on the GaN films. These V-defects possibly contribute as the main source of non-radiative decay. High resolution X-ray diffraction reveals highly single crystalline GaN film grown on a-plane sapphire substrate where the threading dislocations are the cause of V-defects in the film. Photoluminescence measurement shows a highly luminescence band to band emission of GaN film at 3.41 eV along with a broad defect band emission centered at 2.2 eV. A detailed optical and electrical analysis has been carried out to study the defect states and related carrier dynamics for determining the efficacy of the film for device fabrication. The variation in the low temperature current voltage measurements confirms the presence of deep level defects in the mid-band gap region while transient spectroscopy shows that non radiative decay is the dominant relaxation mechanism for the photo excited-carriers from these defect states
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