铁代谢与铁调素hepcidin

2005-2006 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

铁转运刺激因子研究进展

2003-2004 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

膜铁转运蛋白Ferroportin1的研究进展

2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

DMT1的结构及其基因表达调控

2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Effects of swim training on the expression of gastrocnemius’ iron transport proteins in rats

2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Influence of exercise on iron metabolism

2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Analysis of Kif5b Expression during Mouse Kidney Development

published_or_final_versio

Synthesis and electromagnetic wave absorption property of amorphous carbon nanotube networks on a 3D graphene aerogel/BaFe12O19 nanocomposite

Homogeneous amorphous carbon nanotube (ACNT) networks have been synthesized using floating catalyst chemical vapor deposition method on a 3D graphene aerogel (GA)/ BaFe12O19 (BF) nanocomposite which was prepared by a self-propagating combustion process. The as-synthesized ACNT/GA/BF nanocomposite with 3D network structures could be directly used as a good absorber material for electromagnetic wave absorption. The experimental results indicated that the minimum reflection loss of ACNT/GA/BF composite with a thickness of 2 mm was -18.35 dB at 10.64 GHz in the frequency range of 2-18 GHz. The frequency bandwidth of the reflection loss below -10 dB was 3.32 GHz and below -5 dB was 6.24 GHz, respectively. The 3D graphene aerogel structures which composed of dense interlined tubes and amorphous structure bearing quantities of dihedral angles could consume the incident waves through multiple reflection and scattering inside the 3D web structures. The interlinked ACNTs have both the virtues of amorphous CNTs (multiple reflection inside the wall) and crystalline CNTs (high conductivity), consuming the electromagnetic wave as resistance heat. ACNT/GA/BF composite has a good electromagnetic wave absorption performance.Institute of Textiles and Clothing2016-2017 > Academic research: refereed > Publication in refereed journalbcr

Neural mechanisms of 1-back working memory in intellectually gifted children

To investigate the neural mechanisms underlying intellectually gifted children, electroencephalograms (EEG) were recorded while 13 intellectually gifted children and 13 average children accomplished a 1-back working memory task. The results showed that intellectually gifted children elicited significantly shorter P3 latency than their intellectually average peers. These results support the neural efficiency theory that intellectually gifted individual can use their brain more efficiently

Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films

Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B$^+$ implanted samples show red-shifted and asymmetrically broadened Raman line-shape for B$^+$ dose greater than $10^{14}$ ions cm$^{-2}$. The asymmetry and red shift in the Raman line-shape is explained in terms of quantum confinement of phonons in silicon nanostructures formed as a result of ion implantation. PL spectra shows size dependent visible luminescence at $\sim$ 1.9 eV at room temperature, which confirms the presence of silicon nanostructures. Raman studies on P$^+$ implanted samples were also done as a function of ion energy. The Raman results show an amorphous top SOS surface for sample implanted with 150 keV P$^+$ ions of dose 5 x $10^{15}$ ions cm$^{-2}$. The nanostructures are formed when the P$^+$ energy is increased to 350 keV by keeping the ion dose fixed. The GAXRD results show consistency with the Raman results.Comment: 9 Pages, 6 Figures and 1 Table, \LaTex format To appear in SILICON(SPRINGER