Whole-body glucose oxidation rate during prolonged exercise in type 1 diabetic patients under usual life conditions

Objective Fuel oxidation during exercise was studied in type 1 insulin-dependent (T1DM) patients mainly under quite constant insulin and glycemia; these protocols, however, likely do not reflect patients' usual metabolic conditions. The glucose oxidation rate (GLUox) in T1DM patients under usual life conditions was thus investigated during prolonged exercise (3-h) and its behavior was described mathematically. Materials/Methods Whole-body GLUox was determined in eight T1DM patients (4/8 M; aged 35-59 years) and eight well-matched healthy subjects. Venous blood was drawn prior to and every 30 min until the end of exercise; glycemia, insulin, cortisol, and growth hormone concentrations were determined. Oxygen consumption, carbon dioxide production, and ventilation were measured at rest and thereafter every 30 min of the exercise. To prevent hypoglycemia, patients were given fruit fudge (93% sucrose) prior to / during exercise. Results Insulin concentration and glycemia were significantly higher in patients across the entire exercise period (group effect, p < 0.001 for both). GLUox decreased significantly with increasing exercise duration (time effect, p < 0.001), but no significant difference was detected between the two groups (group effect, p = NS). GLUox, expressed as the percentage of the starting value, was described by an exponential function showing a time constant of 90 min (n = 96; mean corrected R2 = 0.666). Conclusions GLUox in T1DM patients was not significantly different from the rate observed in the control subjects. The function describing the time course of GLUox may be useful to correct an estimated GLUox for the duration of exercise and help T1DM patients avoiding exercise-induced glycemic imbalances

On the Adequacy of the Transmission Line Model to Describe the Graphene-Metal Contact Resistance

The contact-end-resistance (CER) method is applied to transfer length method structures to characterize in-depth the graphene-metal contact and its dependence on the back-gate bias. Parameters describing the graphene-metal stack resistance are extracted through the widely used transmission line model. The results show inconsistencies which highlight application limits of the model underlying the extraction method. These limits are attributed to the additional resistance associated with the p-p+ junction located at the contact edge, that is not part of the conventional transmission line model. Useful guidelines for a correct application of the extraction technique are provided, identifying the bias range in which this additional resistance is negligible. Finally, the CER method and the transmission line model are exploited to characterize the graphene-metal contacts featuring different metals. \ua9 2012 IEEE

DFT study of graphene doping due to metal contacts

The experimental results of Metal\u2013graphene (M\u2013G) contact resistance (RC) have been investigated in\u2013depth by means of Density Functional Theory (DFT). The simulations allowed us to build a consistent picture explaining the RC dependence on the metal contact materials employed in this work and on the applied back\u2013gate voltage. In this respect, the M\u2013G distance is paramount in determining the RC behavior

Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF ratio in Hf 0.5 Zr 0.5 O 2 (HZO)-based ferroelectric tunnel junctions (FTJs). Furthermore, we identify and explain compensation conditions that enable an optimal operation of FTJs. Our results provide both key physical insights and design guidelines for the operation of FTJs as multilevel synaptic devices

A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions

We propose a simple expression to relate the total excess noise factor of a single-carrier multiplication staircase avalanche photodiode (APD) to the excess noise factor and gain given by the individual conduction band discontinuities. The formula is valid when electron impact ionization dominates hole impact ionization; hence, it is especially suited for staircase APDs with In-rich multiplication regions, as opposed, for example, to GaAs/AlGaAs systems where hole ionization plays an important role. The formula has been verified by accurate means of numerical simulations based on a newly developed nonlocal history dependent impact ionization model

Optimization of GaAs/AlGaAs staircase avalanche photodiodes accounting for both electron and hole impact ionization

A recently developed nonlocal history dependent model for electron and hole impact ionization is used to compute the gain and the excess noise factor in avalanche photodiodes featuring heterojunctions of III-V compound semiconductors while accounting for both carriers. The model has been calibrated with measurements by our group, as well as on noise versus gain data from the literature. We explore the avalanche photodiode design trade-offs related to the number of GaAs/AlGaAs conduction band steps for X-ray spectroscopy applications

Experimental and simulation analysis of carrier lifetimes in GaAs/AlGaAs Avalanche Photo-Diodes

Extensive experimental characterization and TCAD simulation analysis have been used to study the dark current in Avalanche Photo-Diodes (APDs). The comparison between the temperature dependence of measurements and simulations points out that SRH generation/recombination is responsible for the observed dark current. After the extraction of the carrier lifetimes in the GaAs layers, they have been used to predict the APD collection efficiency of the photo-generated currents under realistic operation conditions and as a function of the photogeneration position inside the absorption layer

Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection

We report on a suite of modeling approaches for the optimization of Avalanche Photodiodes for X-rays detection. Gain and excess noise are computed efficiently using a non-local/history dependent model that has been validated against full-band Monte Carlo simulations. The (stochastic) response of the detector to photon pulses is computed using an improved Random-Path-Length algorithm. As case studies, we consider diodes consisting of AlGaAs/GaAs multi-layers with separated absorption and multiplication regions. A superlattice creating a staircase conduction band structure is employed in the multiplication region to keep the multiplication noise low. Gain and excess noise have been measured in devices fabricated with such structure and successfully compared with the developed models

Going Ballistic: Graphene Hot Electron Transistors

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance

Haptoglobin and malaria

10.1179/135100001101536508Redox Report66389-392RDRP