34 research outputs found
Publication patterns in HEP computing
An overview of the evolution of computing-oriented publications in high
energy physics following the start of operation of LHC. Quantitative analyses
are illustrated, which document the production of scholarly papers on
computing-related topics by high energy physics experiments and core tools
projects, and the citations they receive. Several scientometric indicators are
analyzed to characterize the role of computing in high energy physics
literature. Distinctive features of software-oriented and hardware-oriented
scholarly publications are highlighted. Current patterns and trends are
compared to the situation in previous generations' experiments.Comment: To be published in the Proc. of CHEP (Computing in High Energy
Physics) 201
Writing software or writing scientific articles?
An analysis of publications related to high energy physics computing in refereed journals is presented. The distribution of papers associated to various fields of computing relevant to high energy physics is critically analyzed. The relative publication rate of software papers is evaluated in comparison to other closely related physics disciplines, such as nuclear physics, radiation protection and medical physics, and to hardware publications. The results hint to the fact that, in spite of the significant effort invested in high energy physics computing and its fundamental role in the experiments, this research area is underrepresented in scientific literature; nevertheless the analysis of citations highlights the significant impact of software publications in experimental research
Molecule-Electrode Interface Energetics in Molecular Junction: a Transition Voltage Spectroscopy Study
We assess the performances of the transition voltage spectroscopy (TVS)
method to determine the energies of the molecular orbitals involved in the
electronic transport though molecular junctions. A large number of various
molecular junctions made with alkyl chains but with different chemical
structure of the electrode-molecule interfaces are studied. In the case of
molecular junctions with clean, unoxidized electrode-molecule interfaces, i.e.
alkylthiols and alkenes directly grafted on Au and hydrogenated Si,
respectively, we measure transition voltages in the range 0.9 - 1.4 V. We
conclude that the TVS method allows estimating the onset of the tail of the
LUMO density of states, at energy located 1.0 - 1.2 eV above the electrode
Fermi energy. For oxidized interfaces (e.g. the same monolayer measured with Hg
or eGaIn drops, or monolayers formed on a slightly oxidized silicon substrate),
lower transition voltages (0.1 - 0.6 V) are systematically measured. These
values are explained by the presence of oxide-related density of states at
energies lower than the HOMO-LUMO of the molecules. As such, the TVS method is
a useful technique to assess the quality of the molecule-electrode interfaces
in molecular junctions.Comment: Accepted for publication in J. Phys. Chem C. One pdf file including
manuscript, figures and supporting informatio
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Basic mechanisms for the new millennium
This part of the Short Course will review the basic mechanisms for radiation effects in semiconductor devices. All three areas of radiation damage will be considered -- total dose, displacement effects, and single event effects. Each of these areas will be discussed in turn. First an overview and background will be provided on the historical understanding of the damage mechanism. Then there will be a discussion of recent enhancements to the understanding of those mechanisms and an up-to-date picture provided of the current state of knowledge. Next the potential impact of each of these damage mechanisms on devices in emerging technologies and how the mechanisms may be used to understand device performance will be described, with an emphasis on those likely to be of importance in the new millennium. Finally some additional thoughts will be presented on how device scaling expected into the next century may impact radiation hardness
SEM technique for experimentally locating latch-up paths in integrated circuits
A technique is presented for using the scanning electron microscope (SEM) in the electron-beam-induced current (EBIC) mode to delineate latch-up paths in CMOS ICs. In the EBIC mode, the current produced by the collection and separation of the electron-beam-generated electron-hole pairs in the space charge regions of the device is measured and used to form an image. Since the collection of these carriers is dependent on space charge region width (and thus junction potential), anything that alters the depletion layer width will affect the collection efficiency. In a latch condition the junctions involved in the latch will be biased differently from those which are not, and thus the EBIC signal from those regions should be measurably different
Conjugate Hib vaccines
The Geant4 reference paper published in Nuclear Instruments and Methods A in
2003 has become the most cited publication in the whole Nuclear Science and
Technology category of Thomson-Reuter's Journal Citation Reports. It is
currently the second most cited article among the publications authored by two
major research institutes, CERN and INFN. An overview of Geant4 presence (and
absence) in scholarly literature is presented; the patterns of Geant4 citations
are quantitatively examined and discussed.Comment: 6 pages, 9 figures and images, to appear in proceedings of the
Nuclear Science Symposium and Medical Imaging Conference 2009, Orland