Forming B\u3csub\u3e1-x\u3c/sub\u3eC\u3csub\u3ex\u3c/sub\u3e Semiconductor Layers by Chemical Vapor Deposition

Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio of the deposited material is controlled so that the film has a suitable band gap energy. Boron carbides such as B4.7C, B7.2C and B19C have suitable band gap energies between 0.8 and 1.7 eV. The stoichiometry of the film can be selected by varying the partial pressure of precursor gases, such as nido pentaborane and methane. The precursor gas or gases are energized. e.g., in a plasma reactor. The heterojunction diodes retain good rectifying properties at elevated temperature, e.g., up to 400° C

Forming B\u3csub\u3e1-x\u3c/sub\u3eC\u3csub\u3ex\u3c/sub\u3e Semiconductor Layers by Chemical Vapor Deposition

Active semiconductor devices including heterojunction diodes and thin film transistors are formed by PECVD deposition of a boron carbide thin film on an N-type substrate. The boron to carbon ratio of the deposited material is controlled so that the film has a suitable band gap energy. Boron carbides such as B4.7C, B7.2C and B19C have suitable band gap energies between 0.8 and 1.7 eV. The stoichiometry of the film can be selected by varying the partial pressure of precursor gases, such as nido pentaborane and methane. The precursor gas or gases are energized. e.g., in a plasma reactor. The heterojunction diodes retain good rectifying properties at elevated temperature, e.g., up to 400° C

Cobaltocene adsorption and dissociation on Cu(1 1 1)

Photoemission results indicate that the initial adsorption of cobaltocene on Cu(1 1 1) at 150 K leads to molecular fragmentation, but with subsequent cobaltocene exposures, molecular absorption occurs. The molecularly adsorbed species is either adsorbed with only a fraction of molecules adopting a preferential orientation along the surface normal or adsorbed with the molecular axis away from the surface normal. This adsorption behavior is compared to nickelocene and ferrocene adsorption

The effect of lateral interactions on the thermal desorption of N\u3csub\u3e2\u3c/sub\u3e from Ni(100)

We have investigated the desorption of N2 from Ni(100) using thermal desorption spectroscopy (TDS). A modified Polanyi-Wigner equation has been used to obtain the desorption energy and the preexponential factor, both of which depend on the coverage of the adsorbate. We show that there is a large lateral interaction among the adlayer molecules when N2 goes down as ordered c (2 X 2) on Ni. In addition, the overlayer ordering, in the thermal desorption process, is observed to affect the thermal desorption spectra

The chemistry of the gadolinium-nickel interface

Gadolinium overlayers on Ni(111) have been studied by angle resolved photoemission, angle resolved AES, LEED, and RHEEB. We have observed pronounced interdiffusion of nickel with the gadolinium overlayer at temperatures as low as 150 K. This is in marked contrast with gadolinium overlayers on Cu(108) where substantial interdiffusion is not observed until 360 K, but is consistent with studies of ytterbium on nickel. [A. Nilsson, B Eriksson, N. Martenssom, J. N. Andersen, and J. Onsgaard, Phys. Rev. B 38,10357, ( 1988) and I. Chorkendorff, K. Onsgaard, J. Schmidt-May and R. Nyholm, Surf. Sci. 160, 587, (1985) .] There is a strong interfacial heat of interaction observed with gadolinium on both copper and nickel resulting in pronounced binding energy shifts observed in photoemission. An extremely small kinetic barrier to rare earth diffusion through nickel has been measured. The results are compared to transition metal overlayers on transition metal substrates

The chemistry of the gadolinium-nickel interface

Gadolinium overlayers on Ni(111) have been studied by angle resolved photoemission, angle resolved AES, LEED, and RHEEB. We have observed pronounced interdiffusion of nickel with the gadolinium overlayer at temperatures as low as 150 K. This is in marked contrast with gadolinium overlayers on Cu(108) where substantial interdiffusion is not observed until 360 K, but is consistent with studies of ytterbium on nickel. [A. Nilsson, B Eriksson, N. Martenssom, J. N. Andersen, and J. Onsgaard, Phys. Rev. B 38,10357, ( 1988) and I. Chorkendorff, K. Onsgaard, J. Schmidt-May and R. Nyholm, Surf. Sci. 160, 587, (1985) .] There is a strong interfacial heat of interaction observed with gadolinium on both copper and nickel resulting in pronounced binding energy shifts observed in photoemission. An extremely small kinetic barrier to rare earth diffusion through nickel has been measured. The results are compared to transition metal overlayers on transition metal substrates

FABRICATION OF MICRON SCALE MAGNETIC NICKEL FEATURES BY SELECTIVE AREA ORGANOMETALLIC CHEMICAL VAPOR DEPOSITION

We demonstrate that it is possible to deposit a wide range of magnetic features, using photo-assisted and electron radiation induced selective area organometallic chemical vapor deposition. Large arrays of identical micron to nano scale Ni features were deposited by these methods. Their magnetic properties were studied by alternating gradient force magnetometry as well as magnetic force microscopy. Our morphological and magnetic measurements show that the structures are spatially well defined, and the magnetic properties are related to the structural shapes of the features

Changes in electron localization and density of states near E\u3csub\u3eF\u3c/sub\u3e across the nonmetal-metal transition in Mg overlayers

A nonmetal-to-metal transition in Mg monolayers on Mo(112) has been indicated by photoemission and resonant photoemission. The dramatic changes of the density of states, the dispersion of bands near EF, and screening are observed across the nonmetal-to-metal transition. The changes of the resonance photon energy and the intensity of Mg 2p→εd excitation, with different coverages, indicate that there exists a correlation between the electronic structure (particularly final-state screening effects) and the overlayer structure. The commensurate-to-incommensurate transition beyond 0.5 monolayer of coverage corresponds to the overlayer nonmetal-to-metal transition, which is due to the hybridization of Mg s and p bands and represents a transition from a localized (bondlike) to a delocalized (bandlike) phase for divalent atoms

Epitaxial growth of iron iodide films on Fe(l10)

The interaction of iodine vapor on an Fe(110) single crystal surface at room temperature has been investigated primarily through the use of LEED and UPS. Both a series of chemisorbed overlayers and an epitaxial iodide layer are observed. Iodide formation proceeds through an island growth mechanism with the iodide basal plane parallel to the Fe(110) surface. Evidence is presented that the defects introduced on the surface during argon ion sputtering may be important as nucleation sites for iodide growth. The results are compared with the results of previous studies

Angle-resolved photoemission from bromine chemisorbed on Ni(100)

Molecular bromine dissociatively adsorbs to form a chemisorbed overlayer on Ni(100). The bromine induced 4px,y and 4pz orbitals have been identified at Γ̅ with binding energies of 6.6 ± 0.2 eV and 5.3 ± 0.2 eV below the Fermi energy, respectively. The relative ionization cross-section variations of the two bromine levels 4px and 4pz are observed to differ with changing photon energy