Direct Evaluation of the Quantum Confinement Effect in Single Isolated Ge Nanocrystals

To address the yet open question regarding the nature of quantum confinement in Ge nanocrystals (Ge NCs) we employed scanning tunneling spectroscopy to monitor the electronic structure of individual isolated Ge NCs as a function of their size. The (single-particle) band gaps extracted from the tunneling spectra increase monotonically with decreasing nanocrystal size, irrespective of the capping ligands, manifesting the effect of quantum confinement. Band-gap widening of ∼1 eV with respect to the bulk value was observed for Ge-NCs 3 nm in diameter. The picture emerging from comparison with theoretical calculations and other experimental results is discussed

Mobility–Lifetime Products in MAPbI₃ Films

Photovoltaic solar cells operate under steady-state conditions that are established during the charge carrier excitation and recombination. However, to date no model of the steady-state recombination scenario in halide perovskites has been proposed. In this Letter we present such a model that is based on a single type of recombination center, which is deduced from our measurements of the illumination intensity dependence of the photoconductivity and the ambipolar diffusion length in those materials. The relation between the present results and those from time-resolved measurements, such as photoluminescence that are commonly reported in the literature, is discussed

What Is the Mechanism of MAPbI₃ p‑Doping by I₂? Insights from Optoelectronic Properties

Obtaining insight into, and ultimately control over, electronic doping of halide perovskites may improve tuning of their remarkable optoelectronic properties, reflected in what appear to be low defect densities and as expressed in various charge transport and optical parameters. Doping is important for charge transport because it determines the electrical field within the semiconducting photoabsorber, which strongly affects collection efficiency of photogenerated charges. Here we report on intrinsic doping of methylammonium lead tri-iodide, MAPbI₃, as thin films of the types used for solar cells and LEDs, by I₂ vapor at a level that does not affect the optical absorption and leads to a small (<20 meV, ∼9 nm) red shift in the photoluminescence peak. This I₂ vapor treatment makes the films 10× more electronically conductive in the dark. We show that this change is due to p-type doping because we find their work function to increase by 150 mV with respect to the ionization energy (valence band maximum), which does not change upon I₂ exposure. The majority carrier (hole) diffusion length increases upon doping, making the material less ambipolar. Our results are well-explained by I₂ exposure decreasing the density of donor defects, likely iodide vacancies (V_I) or defect complexes, containing V_I. Invoking iodide interstitials, which are acceptor defects, seems less likely based on calculations of the formation energies of such defects and is in agreement with a recent report on pressed pellets