3 research outputs found

    Table_1_Bidirectional association between handgrip strength and ADLs disability: a prospective cohort study.docx

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    BackgroundDecreased handgrip strength (HGS) and activities of daily living (ADL) disability are common in aging populations. No studies have evaluated the bidirectional associations between HGS and ADL disability. This study aimed to explore the bidirectional effects of HGS and ADL disability.MethodsThis study analyzed data from two waves (2011 and 2015) of China Health and Retirement Longitudinal Study (CHARLS). Low HGS is defined by the Asian Working Group for Sarcopenia criteria. Meanwhile, disability was assessed by ADLs scale. The prospective bidirectional association between HGS and ADL disability was examined using binary logistic regression. Subgroup analysis were performed according to age and gender.ResultsA total of 4,902 and 5,243 participants were included in the Stage I and Stage II analyses, respectively. On the one hand, low HGS was significantly associated with subsequent ADL disability. The odds ratio (OR) value of developing BADL disability and IADL disability were 1.60 (95% confidence interval (CI): 1.23–2.08) and 1.40 (95% CI: 1.15–1.70), respectively, in participants with low HGS. On the other hand, baseline ADL disability was associated with an increased risk of developing low HGS. The OR value of developing low HGS were 1.84 (95% CI: 1.34–2.51) and 1.46 (95% CI: 1.19–1.79) for participants with BADL disability and participants with IADL disability, respectively. Lastly, the strength of the bidirectional associations varied among subgroups.ConclusionsA significant bidirectional associations were identified between HGS and ADL disability. Interventions should be developed to prevent the development or progression of both low HGS and ADL disability.</p

    Tetraethylenepentamine-Modified Activated Semicoke for CO<sub>2</sub> Capture from Flue Gas

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    To separate CO<sub>2</sub> from coal-fired power plant emissions, semicoke, which is cheap and easy to obtain, was further activated to use as the carrier and tetraethylenepentamine (TEPA) was impregnated in the activated semicoke to prepare solid amine sorbents. The effects of activating agents, adsorption temperature, and the presence of water on CO<sub>2</sub> sorption were investigated in a fixed-bed reactor, and the regenerability and adsorption kinetics for prepared sorbents were also studied. The equilibrium adsorption capacity for N<sub>2</sub>-activated semicoke (SE-N<sub>2</sub>) was 2.70 and 2.14 mmol/g at 20 °C when water was absent and present, respectively, and the equilibrium adsorption capacity for 10 wt % TEPA-modified N<sub>2</sub>-activated semicoke (SE-N<sub>2</sub>-TEPA10%) was 3.24 and 3.58 mmol/g at 60 °C when water was absent and present, respectively. After 10 cyclic regenerations, the adsorption capacity for SE-N<sub>2</sub>-TEPA10% reduced by 7.7% under dry conditions, and SE-N<sub>2</sub>-TEPA10% showed good regenerability

    Strontium Oxide Tunnel Barriers for High Quality Spin Transport and Large Spin Accumulation in Graphene

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    The quality of the tunnel barrier at the ferromagnet/graphene interface plays a pivotal role in graphene spin valves by circumventing the impedance mismatch problem, decreasing interfacial spin dephasing mechanisms and decreasing spin absorption back into the ferromagnet. It is thus crucial to integrate superior tunnel barriers to enhance spin transport and spin accumulation in graphene. Here, we employ a novel tunnel barrier, strontium oxide (SrO), onto graphene to realize high quality spin transport as evidenced by room-temperature spin relaxation times exceeding a nanosecond in graphene on silicon dioxide substrates. Furthermore, the smooth and pinhole-free SrO tunnel barrier grown by molecular beam epitaxy (MBE), which can withstand large charge injection current densities, allows us to experimentally realize large spin accumulation in graphene at room temperature. This work puts graphene on the path to achieve efficient manipulation of nanomagnet magnetization using spin currents in graphene for logic and memory applications
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