3 research outputs found
Table_1_Bidirectional association between handgrip strength and ADLs disability: a prospective cohort study.docx
BackgroundDecreased handgrip strength (HGS) and activities of daily living (ADL) disability are common in aging populations. No studies have evaluated the bidirectional associations between HGS and ADL disability. This study aimed to explore the bidirectional effects of HGS and ADL disability.MethodsThis study analyzed data from two waves (2011 and 2015) of China Health and Retirement Longitudinal Study (CHARLS). Low HGS is defined by the Asian Working Group for Sarcopenia criteria. Meanwhile, disability was assessed by ADLs scale. The prospective bidirectional association between HGS and ADL disability was examined using binary logistic regression. Subgroup analysis were performed according to age and gender.ResultsA total of 4,902 and 5,243 participants were included in the Stage I and Stage II analyses, respectively. On the one hand, low HGS was significantly associated with subsequent ADL disability. The odds ratio (OR) value of developing BADL disability and IADL disability were 1.60 (95% confidence interval (CI): 1.23–2.08) and 1.40 (95% CI: 1.15–1.70), respectively, in participants with low HGS. On the other hand, baseline ADL disability was associated with an increased risk of developing low HGS. The OR value of developing low HGS were 1.84 (95% CI: 1.34–2.51) and 1.46 (95% CI: 1.19–1.79) for participants with BADL disability and participants with IADL disability, respectively. Lastly, the strength of the bidirectional associations varied among subgroups.ConclusionsA significant bidirectional associations were identified between HGS and ADL disability. Interventions should be developed to prevent the development or progression of both low HGS and ADL disability.</p
Tetraethylenepentamine-Modified Activated Semicoke for CO<sub>2</sub> Capture from Flue Gas
To separate CO<sub>2</sub> from coal-fired power plant emissions,
semicoke, which is cheap and easy to obtain, was further activated
to use as the carrier and tetraethylenepentamine (TEPA) was impregnated
in the activated semicoke to prepare solid amine sorbents. The effects
of activating agents, adsorption temperature, and the presence of
water on CO<sub>2</sub> sorption were investigated in a fixed-bed
reactor, and the regenerability and adsorption kinetics for prepared
sorbents were also studied. The equilibrium adsorption capacity for
N<sub>2</sub>-activated semicoke (SE-N<sub>2</sub>) was 2.70 and 2.14
mmol/g at 20 °C when water was absent and present, respectively,
and the equilibrium adsorption capacity for 10 wt % TEPA-modified
N<sub>2</sub>-activated semicoke (SE-N<sub>2</sub>-TEPA10%) was 3.24
and 3.58 mmol/g at 60 °C when water was absent and present, respectively.
After 10 cyclic regenerations, the adsorption capacity for SE-N<sub>2</sub>-TEPA10% reduced by 7.7% under dry conditions, and SE-N<sub>2</sub>-TEPA10% showed good regenerability
Strontium Oxide Tunnel Barriers for High Quality Spin Transport and Large Spin Accumulation in Graphene
The
quality of the tunnel barrier at the ferromagnet/graphene interface
plays a pivotal role in graphene spin valves by circumventing the
impedance mismatch problem, decreasing interfacial spin dephasing
mechanisms and decreasing spin absorption back into the ferromagnet.
It is thus crucial to integrate superior tunnel barriers to enhance
spin transport and spin accumulation in graphene. Here, we employ
a novel tunnel barrier, strontium oxide (SrO), onto graphene to realize
high quality spin transport as evidenced by room-temperature spin
relaxation times exceeding a nanosecond in graphene on silicon dioxide
substrates. Furthermore, the smooth and pinhole-free SrO tunnel barrier
grown by molecular beam epitaxy (MBE), which can withstand large charge
injection current densities, allows us to experimentally realize large
spin accumulation in graphene at room temperature. This work puts
graphene on the path to achieve efficient manipulation of nanomagnet
magnetization using spin currents in graphene for logic and memory
applications