5 research outputs found
Facile Fabrication of Superomniphobic Polymer Hierarchical Structures for Directional Droplet Movement
We
report a facile method for fabricating polymer hierarchical structures,
which are the engineered, ratchet-like microscale structures with
nanoscale dimples, for the directional movement of droplets. The fabricated
polymer hierarchical structures with no surface modifier show hydrophobic,
superhydrophobic, or omniphobic characteristics depending on their
intrinsic polymer properties. Further treatment with a surface modifier
endows the polymer surfaces with superomniphobicity. The fabricated
polymer substrates with no surface modifier enable the movement of
the water droplet along the designed track at almost no inclination
of the substrate
Electroassisted Transfer of Vertical Silicon Wire Arrays Using a Sacrificial Porous Silicon Layer
An electroassisted method is developed
to transfer silicon (Si) wire arrays from the Si wafers on which they
are grown to other substrates while maintaining their original properties
and vertical alignment. First, electroassisted etching is used to
form a sacrificial porous Si layer underneath the Si wires. Second,
the porous Si layer is separated from the Si wafer by electropolishing,
enabling the separation and transfer of the Si wires. The method is
further expanded to develop a current-induced metal-assisted chemical
etching technique for the facile and rapid synthesis of Si nanowires
with axially modulated porosity
Three-Dimensional Hetero-Integration of Faceted GaN on Si Pillars for Efficient Light Energy Conversion Devices
An
important pathway for cost-effective light energy conversion
devices, such as solar cells and light emitting diodes, is to integrate
III–V (<i>e</i>.<i>g</i>., GaN) materials
on Si substrates. Such integration first necessitates growth of high
crystalline III–V materials on Si, which has been the focus
of many studies. However, the integration also requires that the final
III–V/Si structure has a high light energy conversion efficiency.
To accomplish these twin goals, we use single-crystalline microsized
Si pillars as a seed layer to first grow faceted Si structures, which
are then used for the heteroepitaxial growth of faceted GaN films.
These faceted GaN films on Si have high crystallinity, and their threading
dislocation density is similar to that of GaN grown on sapphire. In
addition, the final faceted GaN/Si structure has great light absorption
and extraction characteristics, leading to improved performance for
GaN-on-Si light energy conversion devices
BiVO<sub>4</sub>/WO<sub>3</sub>/SnO<sub>2</sub> Double-Heterojunction Photoanode with Enhanced Charge Separation and Visible-Transparency for Bias-Free Solar Water-Splitting with a Perovskite Solar Cell
Coupling dissimilar
oxides in heterostructures allows the engineering of interfacial,
optical, charge separation/transport and transfer properties of photoanodes
for photoelectrochemical (PEC) water splitting. Here, we demonstrate
a double-heterojunction concept based on a BiVO<sub>4</sub>/WO<sub>3</sub>/SnO<sub>2</sub> triple-layer planar heterojunction (TPH)
photoanode, which shows simultaneous improvements in the charge transport
(∼93% at 1.23 V vs RHE) and transmittance at longer wavelengths
(>500 nm). The TPH photoanode was prepared by a facile solution
method: a porous SnO<sub>2</sub> film was first deposited on a fluorine-doped
tin oxide (FTO)/glass substrate followed by WO<sub>3</sub> deposition,
leading to the formation of a double layer of dense WO<sub>3</sub> and a WO<sub>3</sub>/SnO<sub>2</sub> mixture at the bottom. Subsequently,
a BiVO<sub>4</sub> nanoparticle film was deposited by spin coating.
Importantly, the WO<sub>3</sub>/(WO<sub>3</sub>+SnO<sub>2</sub>) composite
bottom layer forms a disordered heterojunction, enabling intimate
contact, lower interfacial resistance, and efficient charge transport/transfer.
In addition, the top BiVO<sub>4</sub>/WO<sub>3</sub> heterojunction layer improves light absorption
and charge separation. The resultant TPH photoanode shows greatly
improved internal quantum efficiency (∼80%) and PEC water oxidation
performance (∼3.1 mA/cm<sup>2</sup> at 1.23 V vs RHE) compared
to the previously reported BiVO<sub>4</sub>/WO<sub>3</sub> photoanodes.
The PEC performance was further improved by a reactive-ion etching
treatment and CoO<sub><i>x</i></sub> electrocatalyst deposition.
Finally, we demonstrated a bias-free and stable solar water-splitting
by constructing a tandem PEC device with a perovskite solar cell (STH
∼3.5%)
Branched TiO<sub>2</sub> Nanorods for Photoelectrochemical Hydrogen Production
We report a hierarchically branched TiO<sub>2</sub> nanorod structure that serves as a model architecture for efficient photoelectrochemical devices as it simultaneously offers a large contact area with the electrolyte, excellent light-trapping characteristics, and a highly conductive pathway for charge carrier collection. Under Xenon lamp illumination (UV spectrum matched to AM 1.5G, 88 mW/cm<sup>2</sup> total power density), the branched TiO<sub>2</sub> nanorod array produces a photocurrent density of 0.83 mA/cm<sup>2</sup> at 0.8 V versus reversible hydrogen electrode (RHE). The incident photon-to-current conversion efficiency reaches 67% at 380 nm with an applied bias of 0.6 V versus RHE, nearly two times higher than the bare nanorods without branches. The branches improve efficiency by means of (i) improved charge separation and transport within the branches due to their small diameters, and (ii) a 4-fold increase in surface area which facilitates the hole transfer at the TiO<sub>2</sub>/electrolyte interface