175 research outputs found

    Using Volterra Series for an Estimation of Fundamental Intermodulation Products

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    The most precise procedure for determining the intermodulation products is to find a steady-state period of the signal first, and then to calculate its spectrum by means of the fast Fourier transform. However, this method needs time-consuming numerical integration over many periods of the faster signal even for enhanced methods for finding the steady state. In the paper, an efficient method for fast estimation of the fundamental intermodulation products is presented. The method uses Volterra series in a simple multistep algorithm which is compatible with a typical structure of the frequency-domain part of circuit simulators. The method is demonstrated by an illustrative testing circuit first, which clearly shows possible incorrect interpretation of the Volterra series. Thereafter, practical usage of the algorithm is demonstrated by fast estimation of the main intermodulation products of a low-voltage low-power RF CMOS fourquadrant multiplier

    An Efficient Procedure for the Time-Domain Sensitivity Analysis

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    Standard tools for CAD have limited modes of the sensitivity analysis: PSPICE only contains a static mode and SPECTRE includes frequency-domain and static modes. However, many RF systems use symmetrical structures for enhancing the circuit properties. For such systems, the static sensitivities are zero on principle and hence the time-domain sensitivity analysis should be used. In the paper, a novel recurrent formula for the time/domain sensitivity analysis is derived which uses by-products of an efficient implicit integration algorithm. As the selected integration algorithm is more flexible than the Gear's one that is ordinary used, the sensitivity analysis is more efficient in comparison with the standard CAD tools. An implementation of the method is demonstrated using the analysis of a low-voltage four-quadrant RF multiplier. Nonstandard temperature sensitivity analyses are also tested in the static and dynamic modes

    SDG fermion-pair algebraic SO(12) and Sp(10) models and their boson realizations

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    It is shown how the boson mapping formalism may be applied as a useful many-body tool to solve a fermion problem. This is done in the context of generalized Ginocchio models for which we introduce S-, D-, and G-pairs of fermions and subsequently construct the sdg-boson realizations of the generalized Dyson type. The constructed SO(12) and Sp(10) fermion models are solved beyond the explicit symmetry limits. Phase transitions to rotational structures are obtained, also in situations where there is no underlying SU(3) symmetry.Comment: 25 LaTeX pages, 4 uuencoded postscript figures included, Preprint IFT/8/94 & STPHY-TH/94-

    Using the Variable-Length Arithmetic for an Accurate Poles-Zeros Analysis

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    In the paper, a reduction algorithm for transforming the general eigenvalue problem to the standard one is presented for both classical full-matrix methods and a sparse-matrix technique appropriate for large-scale circuits. An optimal pivoting strategy for the two methods is proposed to increase the precision of the computations. The accuracy of the algorithms is furthermore increased using longer numerical data. First, a ORQJ.GRXEOH precision sparse algorithm is compared with the GRXEOH precision sparse and full-matrix ones. Finally, the application of a suitable multiple-precision arithmetic library is evaluated

    Modeling Delays of Microwave Transistors and Transmission Lines by the 2nd Order Bessel Function

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    At present, most of simulation programs can characterize gate delays of microwave transistors. However, the delay is mostly approximated by means of first-order differential equations. In the paper, a more accurate way is suggested which is based on an appropriate second-order differential equation. Concerning the transmission line delay, majority of the simulation programs use both Branin (for lossless lines) and LCRG (for lossy lines) models. However, the first causes extreme simulation times, and the second causes well-known spurious oscillations in the simulation results. In the paper, an unusual way for modeling the transmission line delay is defined, which is also based on the second-order Bessel function. The proposed model does not create the spurious oscillations and the simulation times are comparable with those obtained with the classical models. Properties of the implementation of the second-order Bessel function are demonstrated by analyses of both digital and analog microwave circuits

    Common LISP as Simulation Program (CLASP) of Electronic Circuits

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    In this paper, an unusual and efficient usage of functional programming language Common LISP as simulation program (CLASP) for electronic circuits is proposed. The principle of automatic self-modifying program has enabled complete freedom in definition of methods for optimized solution of any problem and speeding up the entire process of simulation. A new approach to program structure in electronic circuit simulator CLASP is described. The definition of simple electronic devices as resistor, voltage source and diode is given all together with description of their memory management in program CLASP. Other circuit elements can be easily defined in the same way. Simulation methods for electronic circuits as linear and nonlinear direct current analysis (DC) are suggested. A comparison of performances of two different linear solvers (an original and the standard GNU GSL) for circuit equations is demonstrated by an algorithm for automatic generation of huge circuits

    Enhancing the Accuracy of Microwave Element Models by Artificial Neural Networks

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    In the recent PSpice programs, five types of the GaAs FET model have been implemented. However, some of them are too sophisticated and therefore very difficult to measure and identify afterwards, especially the realistic model of Parker and Skellern. In the paper, simple enhancements of one of the classical models are proposed first. The resulting modification is usable for the accurate modeling of both GaAs FETs and pHEMTs. Moreover, its updated capacitance function can serve as an accurate representation of microwave varactors, which is also important. The precision of the updated models can be strongly enhanced using the artificial neural networks. In the paper, both using an exclusive neural network without an analytic model and cooperating a corrective neural network with the updated analytic model will be discussed. The accuracy of the analytic models, the models based on the exclusive neural network, and the models created as a combination of the updated analytic model and the corrective neural network will be compared
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