Ferromagnetic Layers in a Topological Insulator (Bi,Sb)₂Te₃ Crystal Doped with Mn

Magnetic topological insulators (MTIs) have recently become a subject of poignant interest; among them, Z2 topological insulators with magnetic moment ordering caused by embedded magnetic atoms attract special attention. In such systems, the case of magnetic anisotropy perpendicular to the surface that holds a topologically nontrivial surface state is the most intriguing one. Such materials demonstrate the quantum anomalous Hall effect, which manifests itself as chiral edge conduction channels that can be manipulated by switching the polarization of magnetic domains. In the present paper, we uncover the atomic structure of the bulk and the surface of Mn0.06Sb1.22Bi0.78Te3.06 in conjunction with its electronic and magnetic properties; this material is characterized by naturally formed ferromagnetic layers inside the insulating matrix, where the Fermi level is tuned to the bulk band gap. We found that in such mixed crystals septuple layers (SLs) of Mn(Bi,Sb)2Te4 form structures that feature three SLs, each of which is separated by two or three (Bi,Sb)2Te3 quintuple layers (QLs); such a structure possesses ferromagnetic properties. The surface obtained by cleavage includes terraces with different terminations. Manganese atoms preferentially occupy the central positions in the SLs and in a very small proportion can appear in the QLs, as indirectly indicated by a reshaped Dirac cone

Laterally Selective Oxidation of Large-Scale Graphene with Atomic Oxygen

Using X-ray photoemission microscopy, we discovered that oxidation of commercial large-scale graphene on Cu foil, which typically has bilayer islands, by atomic oxygen proceeds with the formation of the specific structures: though relatively mobile epoxy groups are generated uniformly across the surface of single-layer graphene, their concentration is significantly lower for bilayer islands. More oxidized species like carbonyl and lactones are preferably located at the centers of these bilayer islands. Such structures are randomly distributed over the surface with a mean density of about 3× 10⁶ cm^–2 in our case. Using a set of advanced spectromicroscopy instruments including Raman microscopy, X-ray photoelectron spectroscopy (μ-XPS), Auger electron spectroscopy (nano-AES), and angle-resolved photoelectron spectroscopy (μ-ARPES), we found that the centers of the bilayer islands where the second layer nucleates have a high defect concentration and serve as the active sites for deep oxidation. This information can be potentially useful in developing lateral heterostructures for electronics and optoelectronics based on graphene/graphene oxide heterojunction