Correlation of electrical properties and acoustic loss in single crystalline lithium niobate-tantalate solid solutions at elevated temperatures

Electrical conductivity and acoustic loss Q−1 of single crystalline Li(Nb,Ta)O3 solid solutions (LNT) are studied as a function of temperature by means of impedance spectroscopy and resonant piezoelectric spectroscopy, respectively. For this purpose, bulk acoustic wave resonators with two different Nb/Ta ratios are investigated. The obtained results are compared to those previously reported for congruent LiNbO3. The temperature dependent electrical conductivity of LNT and LiNbO3 show similar behavior in air at high temperatures from 400 to 700 °C. Therefore, it is concluded that the dominant transport mechanism in LNT is the same as in LN, which is the Li transport via Li vacancies. Further, it is shown that losses in LNT strongly increase above about 500 °C, which is interpreted to originate from conductivity-related relaxation mechanism. Finally, it is shown that LNT bulk acoustic resonators exhibit significantly lower loss, comparing to that of LiNbO3

Coefficients of Thermal Expansion in La₃Ga₅SiO₁₄ and Ca₃TaGa₃Si₂O₁₄ Crystals

The ordered Ca3TaGa3Si2O14 and disordered La3Ga5SiO14 crystals of the lantangallium silicate family were grown via the Czochralski method. The independent coefficients of thermal expansion of crystals αc and αa were determined using X-ray powder diffraction based on the analysis of X-ray diffraction spectra measured in the temperature range of 25~1000 °C. It is shown that, in the temperature range of 25~800 °C, the thermal expansion coefficients are linear. At temperatures above 800 °C, there is a nonlinear character of the thermal expansion coefficients, associated with a decrease in the Ga content in the crystal lattice

X-ray Diffuse Scattering from Ca3NbGa3Si2O14 Single Crystal under External Electric Field Application

X-ray diffuse scattering from the Ca3NbGa3Si2O14 (CNGS) crystal was measured with a triple axis X-ray diffractometer under the conditions of an external electric field. It is found that the nature of the intensity distribution of the asymmetrical part of diffuse scattering depends on the value of the applied electric field. This phenomenon is apparently associated with different piezoelectric characteristics of defect regions and the rest of the single crystal

Changes in the Raman Spectrum of Monolayer Graphene under Compression/Stretching Strain in Graphene/Piezoelectric Crystal Structures

Results from studying the effect of an applied electric voltage on the Raman spectrum of graphene deposited on a lithium niobate crystal substrate with a ferroelectric domain structure are presented. The use of the principal component method for data processing in combination with correlation analysis made it possible to reveal the contribution to the change in the spectra associated with the linear deformation of the substrate due to the inverse piezoelectric effect. An effect of the graphene coating peeling was found. Furthermore, bending deformations of the graphene coating associated with the presence of a relief on the substrate were found. An analysis of the change in the spectra of graphene under the application of an electric voltage made it possible to determine the height of this relief

Study of the effect of local photon annealing on stress in silicon wafers

The effect of photon annealing on deformation in the crystal structure of boron doped Cz-Si wafers has been studied using triple crystal X-ray diffraction. Conventional annealing of the entire surface of double-side polished silicon wafers with halogen lamps (photon annealing mode) and rapid thermal annealing produce compression deformation. Annealing with special phototemplate providing for local annealing of multiple separated wafer areas (local photon annealing mode) at relatively low wafer temperatures (less than 55 °C) produces tensile deformation. This effect however is not observed if the reverse side of the annealed wafer contains a mechanical gettering layer. A mechanism explaining the experimental results has been suggested and can be used for the synthesis of charge pumps in photoelectric converter structures

Ultraviolet Radiation Sensor Based on ZnO Nanorods/La3Ga5SiO14 Microbalance

The possibility of creating resonant ultraviolet (UV) sensors based on the structure of ZnO nanorods/La3Ga5SiO14 microbalance (LCM) has been investigated. The principle of sensor operation is based on the desorption of oxygen from the surface of ZnO nanorods upon irradiation with UV light and an increase in the concentration of charge carriers that leads to an increase in the capacitance of the structure of ZnO nanorods/LCM. It has been shown that UV radiation intensity affects the resonance oscillation frequency of the LCM sensor. After the end of irradiation, the reverse process of oxygen adsorption on the surface of ZnO nanorods occurs, and the resonance frequency of the sensor oscillations returns to the initial value

Acoustically Stimulated Charge Transport in Graphene Film

The process of acoustically stimulated charge transport in the graphene film on the surface of the YZ−cut of a LiNbO3 crystal was investigated. It was found that the dependence of the current in the graphene film on the frequency of the surface acoustic wave (SAW) excitation repeats the amplitude-frequency response of the SAW delay time line. It is shown that increasing the SAW amplitude leads to an increase in the current in the graphene film, and the current in the graphene film depends linearly on the amplitude of the high-frequency input signal supplied to the interdigital transducer (IDT, in dB). It is demonstrated that at a positive bias potential on the graphene film, the SAW propagation allows to change the direction of the current in the graphene film by changing the amplitude of the SAW. It is also shown that in the frequency range of the amplitude-frequency response of the SAW delay time line, the current in the graphene film can vary from positive to negative values depending on the frequency. The capability to control the SAW excitation frequency or the SAW amplitude makes it possible to control the value and direction of the current in the graphene film. The SAW propagation lets to collect and transport the photo-stimulated charges in the graphene film on the crystal surface

Scanning Electron Microscopy Investigation of Surface Acoustic Wave Propagation in a 41° YX-Cut of a LiNbO3 Crystal/Si Layered Structure

The propagation process of the surface acoustic waves (SAW) and the pseudo-surface acoustic waves (PSAW) in a bonded layered structure of a 41° YX-cut of a LiNbO3 crystal/Si(100) crystal was investigated. The scanning electron microscopy (SEM) method,in the low-energy secondary electrons registration mode, made it possible to visualize the SAW and PSAW in the LiNbO3/Si layered structure. The process of the SAW and PSAW propagation in a LiNbO3/Si layered structure and in a bulk 41° YX-cut of a LiNbO3 crystal were compared. It was demonstrated that the SAW velocities in the layered LiNbO3/Si structure exceed the typical SAW velocities for LiNbO3 and Si single crystals. In the layered structure, the SAW and PSAW velocities were 4062 m/s, 4731 m/s, and 5871 m/s. It was also demonstrated that the PSAW velocities are the same in the LiNbO3/Si layered structure and in the bulk 41° YX-cut of a LiNbO3 crystal