Ethereum 2.0: Deploying a Private Devnet using Proof-of-Stake

In 2022, Ethereum, one of the largest and most utilized blockchains, underwent a major upgrade called the merge. This transition from proof-of-work to proof-of-stake aimed to enhance the network's scalability, security, and energy efficiency. Researchers have since published numerous papers on Ethereum, examining its security and identifying potential vulnerabilities. This thesis focuses on deploying a private development network for Ethereum 2.0 to facilitate detailed simulations and evaluations of these proposed security concerns. The primary objective is to create a robust and flexible testing environment that allows for studying various attack scenarios and the effectiveness of consensus protocols. The research involves developing tools for managing Ethereum nodes, such as simplifying the node deployment processes and enabling features for validator management. Key contributions include creating scripts for easy setup and maintenance of Ethereum nodes, user-friendly monitoring systems, and ensuring client diversity to enhance network resilience. It also lays the groundwork for enabling Byzantine behavior in validators, enabling researchers to perform simulations to test their attack scenarios even more easily. Experimental conducted offers valuable guidelines for researchers and developers who wish to deploy their own nodes. The findings highlight the differences in hardware usage between the private development network and mainnet, providing a comprehensive analysis of resource requirements under different configurations. Not only does the work address the technical challenges associated with deploying and managing Ethereum 2.0 nodes, but it also contributes to the Ethereum community by enhancing its usability and accessibility

Towards High Throughput Large Area Metalens Fabrication using UV-Nanoimprint lithography and Bosch Deep Reactive Ion Etching

We demonstrate the fabrication of diffraction-limited dielectric metasurface lenses for NIR by use of standard industrial high throughput silicon processing techniques: UV Nano Imprint Lithography (UV-NIL) combined with continuous Reactive Ion Etching (RIE) and pulsed Bosch Deep Reactive Ion Etching (DRIE). As the research field of metasurfaces moves towards applications these techniques are relevant as potential replacements of commonly used cost-intensive fabrication methods utilizing Electron Beam Lithography. We show that washboard-type sidewall surface roughness arising from the Bosch DRIE process can be compensated for in the design of the metasurface, without deteriorating lens quality. Particular attention is given to fabrication challenges that must be overcome towards high throughput production of relevance to commercial applications. Lens efficiencies are measured to be 30% and 17% at wavelengths {\lambda} = 1.55$\mu$m and {\lambda} = 1.31$\mu$m, respectively. A number of routes towards process optimization are proposed in relation to encountered challenges